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For 4-ch Found Datasheets File :: 29625 Search Time::1.859ms
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				NEC[NEC]
Part No.	2SJ493 D11265EJ3V0DS00
OCR Text	...RDS(on)2 = 185 m (MAX.) (VGS = -4 V, ID = -8 A) * Low Ciss: Ciss = 1210 pF (TYP.) * Built-in gate protection diode ABSOLUTE MAXIMUM RATIN...ch-C) Rth(ch-A) 4.17 62.5 C/W C/W The information in this document is subject to change without n...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	64.87K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ494 D11266EJ2V0DS00
OCR Text	...NSIONS (in millimeter) 10.00.3 4.50.2 3.20.2 2.70.2 15.00.3 30.1 40.2 FEATURES * Super Low On-State Resistance RDS(on)1 = 50 m: M...ch-C) Rth (ch-A) 3.57 C/W 62.5 C/W Gate Protection Diode Source The diode connected between th...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	68.73K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text	...millimeter) 10.0 0.3 3.2 0.2 4.5 0.2 2.7 0.2 FEATURES * Super Low On-State Resistance 3 0.1 4 0.2 RDS(on)2 = 56 m MAX. (VGS =...ch-c) Rth(ch-A) 3.57 62.5 C/W C/W MP-45F (ISOLATED TO-220) Gate Gate Protection Diode Th...
Description	From old datasheet system MOS Field Effect Power Transistors SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	72.23K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ496
OCR Text	... 0.8 -1 -0.3 -0.1 DC 0.4 er at Operation in ion this area is limited by R DS(on) Op 10 10 s PW 1 0 = ms s (1 10 m sh s ot...ch - a(t) = s (t) * ch - a ch - a = 139 C/W, Ta = 25 C PDM PW T D= PW T 0.003 1sh ...
Description	Silicon P-Channel MOS FET High Speed Power Switching
File Size	49.68K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ504
OCR Text	...ics -50 -10 V -8 V I D (A) -40 -4.5 V -6 V -5 V -4 V -30 -3.5 V -20 -3 V -10 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V)...ch - c(t) = s (t) * ch - c ch - c = 4.17C/W, Tc = 25C PDM PW T D= 0.03 PW T 0.01 10 ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.21K / 10 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ505 2SJ505L 2SJ505S
OCR Text	...d switching. Outline LDPAK 4 D 1 G 1 4 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ505(L), 2SJ505(S) Absolut...ch - c(t) = s (t) * ch - c ch - c = 1.67 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu ...
Description	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	53.43K / 10 Page	View it Online	Download Datasheet

				Renesas Electronics, Corp. HITACHI[Hitachi Semiconductor]
Part No.	2SJ506 2SJ506L 2SJ506S
OCR Text	... devices. Outline DPAK-2 4 D 4 12 G 3 12 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute ...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho ...
Description	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	49.71K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ526
OCR Text	....11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220FM D G 12 S 1. Gate 2. Drain 3. ...ch - c(t) = s (t) * ch - c ch - c = 5.0C/W, Tc = 25C PDM PW T D= 0.03 PW T 0.01 10 ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.48K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ527 2SJ527L 2SJ527S
OCR Text	...0.3 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline DPAK-1 4 4 D 12 G 3 S 12 3 1....ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	53.03K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ528 2SJ528L 2SJ528S
OCR Text	...sistance RDS(on) = 0.17 typ. * 4 V gete drive devices * High speed switching Outline DPAK-2 4 D 4 12 G 3 12 S 3 1....ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho ...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	52.33K / 9 Page	View it Online	Download Datasheet

For 4-ch Found Datasheets File :: 29625 Search Time::1.859ms
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