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  5.0v 12a Datasheet PDF File

For 5.0v 12a Found Datasheets File :: 1865    Search Time::1.328ms    
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    IRFR15N20D IRFU15N20D

IRF[International Rectifier]
Part No. IRFR15N20D IRFU15N20D
OCR Text ...x. Units Conditions --- S VDS = 50V, ID = 10A 41 ID = 10A 10 nC VDS = 160V 21 VGS = 10V, --- VDD = 100V --- ID = 10A ns --- RG = 6.8 --- VG...12a. Unclamped Inductive Test Circuit V (B R )D SS tp 200 100 0 25 50 75 100 125 150 175 ...
Description SMPS MOSFET

File Size 180.49K  /  10 Page

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    IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230

IRF[International Rectifier]
Part No. IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230
OCR Text ... 0.5 1 5.0 15 V DS = 50V 20s PULSE WIDTH 8.0 9.0 6.0 7.0 10.0 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 ...12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V (B R )D S S tp Starting T , ...
Description 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

File Size 123.99K  /  8 Page

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    IRL2910 L2910

International Rectifier
Part No. IRL2910 L2910
OCR Text ...DS = VGS, ID = 250A --- S VDS = 50V, ID = 29A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 16V nA -100 VGS = -16V ...12a. Unclamped Inductive Test Circuit 200 0 V D D = 25 V 25 50 75 100 125 150 A 175 ...
Description RES THICK FILM POWER 10 OHM 5W
HEXFET Power MOSFET

File Size 120.70K  /  8 Page

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    IRLI2910

IRF[International Rectifier]
Part No. IRLI2910
OCR Text ...S, ID = 250A 28 --- --- S VDS = 50V, ID = 29A --- --- 25 VDS = 100V, VGS = 0V A --- --- 250 VDS = 80V, VGS = 0V, TJ = 150C --- --- 100 VGS =...12a 20A 29 A VD S L D R IV E R 800 RG 20V D .U .T IA S tp + V - DD 600 ...
Description HEXFET Power MOSFET

File Size 140.03K  /  8 Page

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    IRFP250N IRFP250

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFP250N IRFP250
OCR Text ...DS = VGS, ID = 250A --- S VDS = 50V, ID = 18A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20...12a. Unclamped Inductive Test Circuit V (B R )D S S tp 200 0 25 50 75 100 125 150 175 Star...
Description    Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)
N-Channel(Hexfet Transistors)
Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A)
Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET(减振钢板基本\u003d 200第五的Rdson)\u003d 0.075ohm,身份证\u003d 30A条)

File Size 120.07K  /  8 Page

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    IRFY140CM

IRF[International Rectifier]
Part No. IRFY140CM
OCR Text ... 0.5 see figures 6 and 13 VDD = 50V, ID =16A, RG = 9.1 VGS = 10V ns see figure 10 Measured from the drain lead, 6mm (0.25 in.) from packag...12a -- Unclamped Inductive Test Circuit Fig. 12b -- Unclamped Inductive Waveforms EAS , Single...
Description POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=16*A)

File Size 248.13K  /  6 Page

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    VB029SP 6060 VB029 VB029_011Y VB029_012Y VB029011Y VB029012Y

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. VB029SP 6060 VB029 VB029_011Y VB029_012Y VB029011Y VB029012Y
OCR Text ... (Ri=10) +100V / 0.2ms (Ri=10) +50V / 400ms (Ri=4.2 , with VIN=3V) VB029, VB029SP, VB029(011Y) VB029(012Y) are mainly intended as high voltage The power switch device driven by a logic level input and interfaces directly to a high energ...
Description Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Voltage Nom.:600V RoHS Compliant: Yes
Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Pink; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
From old datasheet system
HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C.

File Size 86.86K  /  10 Page

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    IRFRU6215 IRFU6215 IRFR6215

IRF[International Rectifier]
Part No. IRFRU6215 IRFU6215 IRFR6215
OCR Text ... = VGS, ID = -250A --- S VDS = -50V, ID = -6.6A -25 VDS = -150V, VGS = 0V A -250 VDS = -120V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 V GS...12a. Unclamped Inductive Test Circuit IAS 0 25 50 75 100 125 150 A 175 S tarting T J , ...
Description HEXFET? Power MOSFET
Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A)

File Size 137.32K  /  10 Page

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    IRFRU9310 IRFU9310 IRFR9310

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFRU9310 IRFU9310 IRFR9310
OCR Text ...= VGS, I D = -250A --- S VDS = -50V, I D = -1.1A -100 VDS = -400V, VGS = 0V A -500 VDS = -320V, VGS = 0V, TJ = 125C 100 V GS = 20V nA -100 V...12a. Unclamped Inductive Test Circuit I AS 40 0 25 50 75 100 125 150 Starting T J, Junctio...
Description -400V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) 功率MOSFET(减振钢板基本\u003d-00V,的Rds(on)\u003d 7.0ohm,身份证\u003d- 1.8A

File Size 110.22K  /  10 Page

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    VND670SP

STMicroelectronics
Part No. VND670SP
OCR Text ... +25V -4V +26.5V Test Level II -50V +50V -50V +50V -5V +46.5V Test Level III -75V +75V -100V +75V -6V +66.5V Test Level IV -100V +100V -150V +100V -7V +86.5V Test Levels Result III C C C C C E Test Levels Delays and Impedance 2ms, 10 0.2ms,...
Description DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER BRIDGE CONFIGURATION

File Size 87.89K  /  13 Page

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