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For 500-1000 Found Datasheets File :: 94873    Search Time::1.546ms    
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    2SC5022

HITACHI[Hitachi Semiconductor]
Part No. 2SC5022
OCR Text ...A) 50 20 10 0.5 0.2 0.1 100 200 500 1000 2000 5000 Collector to Emitter Voltage VCE (V) ic(peak) I C max 1 shot pulse Ta = 25 C ms =1 s Pw 10 m ion at er C) Op 25 DC c = (T 3 2 1 0 50 100 150 Ambient Temperature Ta (C) 20...
Description Silicon NPN Triple Diffused

File Size 33.36K  /  7 Page

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    2SC5032

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5032
OCR Text ...ith one screw (TC=25C) Ratings 500 500 400 7 6 3 1.2 30 2 150 -55 to +150 Unit V 15.00.3 3.00.2 1.20.15 1.450.15 0.750.1 2.540.2 5...1000 VCE=5V 100 fT -- IC VCE=10V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 57.59K  /  3 Page

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    2SC5034

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5034
OCR Text ...ith one screw (TC=25C) Ratings 500 500 400 7 15 7 3 35 2.0 150 -55 to +150 Unit V V V V A A A W C C 15.00.3 3.00.2 Parameter Colle...1000 IC/IB=5 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C hFE -- IC 1000 VCE=5V 300 10...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.16K  /  3 Page

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    2SC5035

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5035
OCR Text ...screw (TC=25C) Ratings 800 800 500 8 10 5 3 40 2 150 -55 to +150 Unit V V V V A A A W C C 15.00.3 3.00.2 13.7-0.2 +0.5 1.20....1000 IC/IB=5 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C hFE -- IC 1000 VCE=5V 300 10...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 61.01K  /  3 Page

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    2SC5063

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5063
OCR Text ...ic equipment. (TC=25C) Ratings 500 500 400 7 3 1.5 0.5 25 1.3 150 -55 to +150 Unit V 10.5min. 2.0 0.80.1 0.5max. 2.540.3 5.0...1000 hFE -- IC IC/IB=5 VCE=5V 1000 300 100 30 10 3 1 0.3 1 0.01 0.1 0.001 0.003 fT -- IC VCE...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 60.70K  /  3 Page

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    2SC5071

SANKEN[Sanken electric]
Part No. 2SC5071
OCR Text ...O VEBO IC IB PC Tj Tstg 2SC5071 500 400 10 12(Pulse24) 4 100(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulat...1000 Collector Current I C( A) Safe Operating Area (Single Pulse) 30 10 0 s Reverse Bias ...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 23.88K  /  1 Page

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    2SC5077 2SC5077A

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5077 2SC5077A
OCR Text ...C=25C) Ratings 800 900 800 900 500 8 15 7 4 45 2 150 -55 to +150 Unit V 15.00.3 3.00.2 s Absolute Maximum Ratings Parameter Colle...1000 VCE=5V 1000 fT -- IC VCE=10V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, POWER TRANSISTOR

File Size 61.72K  /  3 Page

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    2SD1010

http://
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1010
OCR Text ...k 1 Transistor PC -- Ta 500 160 Ta=25C 140 400 100 25C Ta=75C 80 -25C 2SD1010 IC -- VCE 120 VCE=10V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 120 100 80 60 40 20 IB=100A 90A 80A 70A ...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 37.40K  /  2 Page

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    2SD1022

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1022
OCR Text ...urrent Gain h V = 3V, I = Min 1,500 CE C 3A FE Max 30,000 Collector to Emitter Saturation3A V (sat) I = Voltage Max 1.5 V CE C Base to Emitt...1000 25C VCE = 3V Pulse width = 300s 1 8 0C -25C 100 -55C 0.1 Collector Current...
Description Darlington Transistor(5A NPN)

File Size 273.90K  /  8 Page

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    2SD1023

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1023
OCR Text ...ent Gain h V = 3V, I = 3A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 3A V (sat) I = Voltage Max 1.5 V CE C Base to Emitter...1000 25C 0C -25C -55C 1 8 100 0.1 Collector Current IC [A] 2SD1023 Saturati...
Description Darlington Transistor(5A NPN)

File Size 290.46K  /  9 Page

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