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  50a-ifsm Datasheet PDF File

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    1N6822R MSASC150W45LR 1N6822 MSASC150W45L MICROSEMICORP-MSASC150W45LR

Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
Part No. 1N6822R MSASC150W45LR 1N6822 MSASC150W45L MICROSEMICORP-MSASC150W45LR
OCR Text ...Tc= 125 C IF= 10A, Tc= 25 C IF= 50A, Tc= 25 C IF= 100A, Tc= 25 C IF= 150A, Tc= 25 C IF= 200A, Tc= 25 C IF= 50A, Tc= -55 C IF= 50A, Tc= 125 C IF= 100A, Tc= -55 C IF= 100A, Tc= 125 C IF= 150A, Tc= -55 C IF= 150A, Tc= 125 C IF= 10 mA, Tc= 25 C...
Description    LOW LEAKAGE SCHOTTKY DIODE
LOW LEAKAGE SCHOTTKY DIODE 150 A, 45 V, SILICON, RECTIFIER DIODE
Schottky Rectifier

File Size 72.08K  /  2 Page

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    HFA160MD40C

International Rectifier
Part No. HFA160MD40C
OCR Text ... 300 I IRRM - (A) I F = 50A 10 200 IF = 200A IF = 80A 100 I F = 50A 0 100 di f /dt - (A/s) 1000 1 100 di f /dt - (A/s) 1000 Fig. 5 - Typical Reverse Recovery vs. dif/dt, (per Leg) 6000 Fig. 6 - ...
Description 400V 160A HEXFRED Common Cathode Diode in a TO-244AB Isolated package
Ultrafast, Soft Recovery Diode

File Size 295.20K  /  5 Page

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    APT50GP60LDLG

Microsemi Corporation
Part No. APT50GP60LDLG
OCR Text 50A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT(R) The POWER MOS 7(R) IGBT used in this resonant mode combi is a new generation of ...IFSM Characteristic / Test Conditions Maximum Average Forward Current (TC = 124C, Duty Cycle = 0.5) ...
Description Resonant Mode Combi IGBT

File Size 191.12K  /  9 Page

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    HFB50HI20

International Rectifier
Part No. HFB50HI20
OCR Text ...overy Diode VR = 200V IF(AV) = 50A trr = 35ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/...IFSM PD @ TC = 25C TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, TC = 87C Single Pu...
Description Ultrafast, Soft Recovery Diode

File Size 125.45K  /  5 Page

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    IDW100E60 IDW100E6009

Infineon Technologies AG
Part No. IDW100E60 IDW100E6009
OCR Text ...RENT 1.5V 100A 150A 50A 1.0V 100A 0.5V 50A 0A 0V 1V 2V 0.0V 0C 50C 100C 150C VF, FORWARD VOLTAGE Figure 3. Typical diode forward current as a function of forward voltage TJ, JUNCTION TEMPERAT...
Description Fast Switching EmCon Diode
100 A, 600 V, SILICON, RECTIFIER DIODE, TO-247

File Size 178.44K  /  7 Page

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    IHY30N160R2

Infineon Technologies AG
Part No. IHY30N160R2
OCR Text ...0W 200W 150W 100W 50W 0W 25C 50A IC, COLLECTOR CURRENT 50C 75C 100C 125C 150C Ptot, DISSIPATED POWER 40A 30A 20A 10A 0A 25C 50C 75C 100C 125C 150C TC, CASE TEMPERATURE Figure 3. Power dissipation as a...
Description TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode

File Size 609.07K  /  12 Page

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    IHW40T12008 IHW40T120

Infineon Technologies AG
Part No. IHW40T12008 IHW40T120
OCR Text ... POWER DISSIPATION 200W 50A 40A 30A 20A 10A 0A 25C 150W Ptot, 100W 50W 0W 25C 50C 75C 100C 125C 75C 125C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150...
Description Soft Switching Series

File Size 354.35K  /  14 Page

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    IHW30N160R2

Infineon Technologies AG
Part No. IHW30N160R2
OCR Text ...0W 200W 150W 100W 50W 0W 25C 50A IC, COLLECTOR CURRENT 50C 75C 100C 125C 150C Ptot, DISSIPATED POWER 40A 30A 20A 10A 0A 25C 50C 75C 100C 125C 150C TC, CASE TEMPERATURE Figure 3. Power dissipation as a...
Description TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode

File Size 389.66K  /  12 Page

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    7MBR100SB060

FUJI[Fuji Electric]
Part No. 7MBR100SB060
OCR Text ...600V, VGE=0V VCE=0V, VGE=20V IC=50A, VGE=15V chip terminal VCC=300V IC=50A VGE=15V RG=51 VR=600V IF=100A chip terminal VR=800V T=25C T=100C T=25/50C 1.8 2.05 0.45 0.25 0.40 0.05 1.1 1.2 5000 495 3375 Converter mA V mA K Thermis...
Description IGBT(600V/100A)

File Size 569.52K  /  7 Page

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