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FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
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| Part No. |
7MBR75GE060
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| OCR Text |
...=15V VCC=300V IC=50A VGE=15V RG=51ohm VR=600V IF=50A VR=800V Min.
7MBR75GE060
Characteristics Typ. Max. 1.0 0.2 5.5 8.5 2.8 3.1 3.0 3.3 6000 1.2 0.6 1.0 0.35 0.3 1.0 0.1 2.8 0.8 0.6 1.0 0.35 1 0.6 1.55 1.0 Unit mA A V V V V V pF s s s s... |
| Description |
IGBT(600V/75A/PIM)
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| File Size |
642.38K /
9 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
CPV362M4K
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| OCR Text |
...8 I C = 6.0A
1
51 RG = 10 51ohm VGE = 15V VCC = 480V
IC =
6A
IC =
3A
0.6
IC = 1.5 A
0.1
0.4
0.2
0.0 0 10 20 30 40 50
0.01 -60 -40 -20
0
20
40
60
80 100 120 140 160
RG ,, Gate Resistance... |
| Description |
600V UltraFast 8-25 kHz 3-Phase Bridge IGBT in a IMS-2 package
Short Circuit Rated UltraFast IGBT
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| File Size |
312.21K /
10 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC45B3436B
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| OCR Text |
...C5= 1000pF C6=470nF R1=12ohm R2=51ohm Board material :Teflon, t=0.8mm, Specific dielectric constant=2.6 UNIT:(mm)
MITSUBISHI ELECTRIC (5/6)
Apr. 2007
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45B3436B
3.4 - 3.6GHz BAND 30W INTERN... |
| Description |
3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET
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| File Size |
412.57K /
6 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFS48V2527_04 MGFS48V2527 MGFS48V252704
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| OCR Text |
...13pF(GR708) R1,R2 :20ohm R3,R4 :51ohm
MITSUBISHI ELECTRIC CORPORATION
June-'04
(4/6)
MGFS48V2527
TEST CONDITIONS : f=2.0-3.0GHz,VDS=12V,ID=2.0A
S11,S22 Smith Chart Z=50
1.0 2.0 4.0 5.0 3.0 2.0 0.0 0.2 0.5 1.0 2.0 5.0 SCALE FOR|... |
| Description |
2.5 - 2.7GHz BAND 60W GaAs FET
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| File Size |
441.01K /
6 Page |
View
it Online |
Download Datasheet |
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For
51ohm Found Datasheets File :: 26 Search Time::1.453ms
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