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ROHM[Rohm]
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| Part No. |
DAN235E
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| OCR Text |
...=200pF R=0 C=100pF R=1.5k AVE:1.55kV AVE:7.38kV
ESD DISPERSION MAP
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of RO... |
| Description |
Band switching diode
|
| File Size |
158.49K /
4 Page |
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it Online |
Download Datasheet
|
| |
|
|
ROHM[Rohm]
|
| Part No. |
DAN235U
|
| OCR Text |
...=200pF R=0 C=100pF R=1.5k AVE:1.55kV AVE:7.38kV
ESD DISPERSION MAP
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of RO... |
| Description |
SILICON, MIXER DIODE
Band switching diode
|
| File Size |
157.01K /
4 Page |
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it Online |
Download Datasheet |
| |
|
|
ROHM[Rohm]
|
| Part No. |
RN141G
|
| OCR Text |
...E TEST ESD(KV)
4
3
AVE:1.55kV
2
AVE:0.36kV
1
0
C=200pF R=0
C=100pF R=1.5k
ESD DISPERSION MAP
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by ... |
| Description |
High frequency switching
|
| File Size |
107.32K /
3 Page |
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it Online |
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| |
|
|
ROHM[Rohm]
|
| Part No. |
RN141S
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| OCR Text |
...f DISPERSION MAP
5 4 3 AVE:1.55kV 2 AVE:0.36kV 1 0
ELECTROSTATIC DISCHARGE TEST ESD(KV)
C=200pF R=0
C=100pF R=1.5k
ESD DISPERSION MAP
Rev.B
2/2
Appendix
Notes
No technical content pages of this document may be re... |
| Description |
PIN diode
|
| File Size |
107.46K /
3 Page |
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it Online |
Download Datasheet |
| |
|
|
Microsemi, Corp.
ETC[ETC]
GHZTECH[GHz Technology]
List of Unclassifed Manufacturers
|
| Part No. |
TPR1000
|
| OCR Text |
..., extends life.
CASE OUTLINE 55KV, Style 1 Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVces Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum ... |
| Description |
Transponder/ 1090 MHz, Class C, Common Base, Pulsed; P(out) (W): 1000; P(in) (W): 250; Gain (dB): 6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55kv-1 L BAND, Si, NPN, RF POWER TRANSISTOR
1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz
high power COMMON BASE bipolar transistor.
|
| File Size |
68.02K /
2 Page |
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it Online |
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