6.451 pdf Datasheet P1 Full Text Search --- IC-ON-LINE


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6.451 Datasheet PDF File

For 6.451 Found Datasheets File :: 1846 Search Time::1.484ms
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				http:// NEC[NEC] NEC Corp.
Part No.	2SC5007 2SC5007-T1 2SC5007NE68119 2SC5007-T1-T2
OCR Text	...IC = 7 mA, f = 1 GHz) 2 0.5 1.6 0.1 1.0 0.2+0.1 -0 0.3 +0.1 -0 0.15 +0.1 -0.05 PACKAGE DIMENSIONS in millimeters 1.6 0.1 0.8 0.1 ...451 .455 .466 .473 .481 .491 .500 .511 S21 ANG -21.8 -41.2 -60.9 -79.2 -96.1 -109.4 -122.0 -132....
Description	NPN epitaxial-type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD Discrete
File Size	62.00K / 10 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text	... IE = 0 VEB = 1 V, IC = 0 VCE = 6 V, IC = 10 mA1 VCE = 6 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz2 VCE = 6 V, IC = 10 mA,f = 2.0 GHz VC...451 .449 .445 .440 .432 .425 .419 .419 .427 .425 .419 ANG -11.0 -18.5 -23.2 -24.8 -26.0 -27.0 -2...
Description	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	51.33K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5014 2SC5014-T1 2SC5014-T2
OCR Text	... VCBO VCEO VEBO IC PT Tj Tstg 9 6 2 10 60 150 -65 to +150 V V V mA mW C C PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter C...451 .451 .452 .446 .431 .432 ANG -5.7 -11.0 -15.8 -20.1 -23.8 -26.8 -29.5 -32.3 -33.3 -34.7 -36....
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	48.18K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF360 IRF360-15
OCR Text	...- -- -- -- -- -- -- -- -- -- -- 6.1 IGSS I GSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source L...451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3...
Description	Repetitive Avalanche Ratings TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A) TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A) 400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
File Size	138.60K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D1
OCR Text	...ymbol VDS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.5 2.2 -55 to 150 C W A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 ...451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 ...
Description	MOSFET / SCHOTTKY DIODE
File Size	162.75K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D2
OCR Text	...ymbol VDS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.7 2.3 -55 to 150 C W A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 ...451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 ...
Description	MOSFET / SCHOTTKY DIODE
File Size	131.40K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text	...1 8 7 A D D D D 2 3 6 Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedente...451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3...
Description	8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET Chip-Set for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	238.61K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811A IRF7809A IRF7811ATR
OCR Text	... PCB mount application. 3 6 4 5 SO-8 T o p V ie w DEVICE RATINGS IRF7809A VDS RDS(on) QG Qsw Qoss 30V 8.5 m 73 nC 22.5 ...451 0111 IR JAPAN: K&H Bldg., 2F, 3-30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171-0021 Japan T...
Description	PROVISIONAL DATASHEET Chipset for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	124.48K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text	...0 BVDSS -200V RDS(on) 0.80 ID -6.5A The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transisto...451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3...
Description	TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) CAP CER 250VAC 82PF 5% SL 1808 6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	148.64K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text	... RDS(on) = 0.50 G S ID = -6.7A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi...451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: ...
Description	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) HEXFET? Power MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	357.87K / 10 Page	View it Online	Download Datasheet

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