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CREE POWER
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| OCR Text |
...s 4h silicon carbide (n/p-type) 6h silicon carbide (n/p-type)
page 2 ? effective december 1998 ? revised march 2003 properties and specifications for silicon carbide applications: ? high frequency power devices ? high power devices ? high... |
| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6h-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6h-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6h-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
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Integrated Silicon Solution, Inc
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| Part No. |
IS61QDB42M18-200M3 IS61QDB41M36-200M3 IS61QDB41M36
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| OCR Text |
...6D, 7D, 8D, 5E, 6E, 7E, 6F, 6G, 6H, 6J, Power supply. 6K, 5L, 6L, 7L, 4M, 8M, 4N, 8N 11H 10R, 11R, 2R 1R Output driver impedance control. IE...Silicon Solution, Inc. -- 1-800-379-4774
Rev. B 07/09/04
3
36 Mb (1M x 36 & 2M x 18) QUAD (Bu... |
| Description |
36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 4) Synchronous SRAMs
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| File Size |
450.34K /
28 Page |
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Integrated Silicon Solution, Inc
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| Part No. |
IS61QDB22M18-250M3 IS61QDB22M18-250M3L IS61QDB22M18 IS61QDB21M36-250M3 IS61QDB21M36-250M3L
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| OCR Text |
...6D, 7D, 8D, 5E, 6E, 7E, 6F, 6G, 6H, 6J, Power supply. 6K, 5L, 6L, 7L, 4M, 8M, 4N, 8N 11H 10R, 11R, 2R 1R Output driver impedance control. IE...Silicon Solution, Inc. -- 1-800-379-4774
Rev. B 06/29/06
3
36 Mb (1M x 36 & 2M x 18) QUAD (Bu... |
| Description |
36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 2) Synchronous SRAMs
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| File Size |
495.96K /
27 Page |
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TY Semiconductor Co., L...
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| Part No. |
MM1Z10 MM1Z11 MM1Z12 MM1Z2V0
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| OCR Text |
....72 2.5 250 2 0.2 52 mm1z75 6h 75 70...79 2.5 300 2 0.2 57 1) v z is tested with pulses (20 ms). 2) z zt is measured at i z by...silicon planar zener diodes ... |
| Description |
Silicon Planar Zener Diodes
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| File Size |
979.24K /
4 Page |
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Integrated Silicon Solution, Inc
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| Part No. |
IS61DDB42M18-250M3 IS61DDB42M18 IS61DDB41M36-250M3
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| OCR Text |
...6D, 7D, 8D, 5E, 6E, 7E, 6F, 6G, 6H, 6J, Power supply. 6K, 5L, 6L, 7L, 4M, 8M, 4N, 8N 11H 10R, 11R, 2R 1R Output driver impedance control. IE...Silicon Solution, Inc. -- 1-800-379-4774
Rev. B 07/09/04
3
36 Mb (1M x 36 & 2M x 18) DDR-II (... |
| Description |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
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| File Size |
514.32K /
26 Page |
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it Online |
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Integrated Silicon Solution, Inc
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| Part No. |
IS61DDB22M18-250M3 IS61DDB22M18 IS61DDB21M36-250M3
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| OCR Text |
...6D, 7D, 8D, 5E, 6E, 7E, 6F, 6G, 6H, 6J, Power supply. 6K, 5L, 6L, 7L, 4M, 8M, 4N, 8N 11H 10R, 11R, 2R 1R Output driver impedance control. IE...Silicon Solution, Inc. -- 1-800-379-4774
Rev. B 2/22/05
3
36 Mb (1M x 36 & 2M x 18) DDR-II (B... |
| Description |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
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| File Size |
549.55K /
25 Page |
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it Online |
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TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
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| Part No. |
BZT52C56W BZT52C68W BZT52C24W
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| OCR Text |
... 250 2 500 1 0.2 52 bzt52c75w 6h 75 70...79 2.5 300 2 500 1 0.2 57 1) v zt is tested with pulses (20 ms). bzt52c?w silicon planar zener diodes ... |
| Description |
SILICON PLANAR ZENER DIODES
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| File Size |
1,317.33K /
4 Page |
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it Online |
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天津新技术产业园区管理委员会
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| Part No. |
IS61QDB21M36-250M3 IS61QDB41M36-250M3
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| OCR Text |
...6d, 7d, 8d, 5e, 6e, 7e, 6f, 6g, 6h, 6j, 6k, 5l, 6l, 7l, 4m, 5m, 6m, 7m, 8m 4n, 8n power supply. zq 11h output driver impedance control. tm...silicon solution, inc. ? 1-800-379-4774 rev. h 1/6/2010 issi ? 36 mb (1m x 36 & 2m x 18) quad (bur... |
| Description |
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| File Size |
653.15K /
27 Page |
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it Online |
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Integrated Silicon Solution, Inc.
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| Part No. |
IS61DDB21M36-250M3 IS61DDB22M18-250M3
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| OCR Text |
...6d, 7d, 8d, 5e, 6e, 7e, 6f, 6g, 6h, 6j, 6k, 5l, 6l, 7l, 4m, 8m, 4n, 8n power supply. zq 11h output driver impedance control. tms, tdi, tck ...silicon solution, inc. ? 1-800-379-4774 rev. b 2/22/05 issi ? 36 mb (1m x 36 & 2m x 18) ddr-ii (bu... |
| Description |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
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| File Size |
414.47K /
25 Page |
View
it Online |
Download Datasheet |
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