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SIEMENS[Siemens Semiconductor Group] SIEMENS AG Infineon Technologies AG
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Part No. |
BUZ104SL-4
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OCR Text |
...D = (VDS) parameter: tp = 80 s
7.5 A 6.5
Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C
0.38
a b
Ptot = 2W
l jig h kfe d
VGS [V] a 2.5
b c 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0
ID
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Description |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
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File Size |
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8 Page |
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