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NXP Semiconductors N.V.
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Part No. |
BLF4G10S-120
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OCR Text |
...evm rms (%) imd3 (dbc) (typ) cw 861 to 961 28 120 19 57 - - - - gsm edge 861 to 961 28 48 (av) 19 40 - 61 [1] - 72 [2] 1.5 - 2-tone 861 to 961 28 120 (pep) 19 46 - - - - 31 caution this device is sensitive to electrostatic discharge (esd). ... |
Description |
UHF power LDMOS transistor
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File Size |
103.30K /
14 Page |
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it Online |
Download Datasheet |
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Atmel Corp.
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Part No. |
ATTINY261V-10SU
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OCR Text |
...am memory flash (attiny261/461/861) endurance: 10,000 write/erase cycles ? 128/256/512 by tes in-system prog rammable eeprom (a ttiny261/461/861) endurance: 100,000 write/erase cycles ? 128/256/512 bytes internal sram (attiny261/461/861) ... |
Description |
8-bit Microcontroller with 2/4/8K Bytes In-System Programmable Flash
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File Size |
1,981.08K /
236 Page |
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it Online |
Download Datasheet |
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Gennum Corporation
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Part No. |
GS1582-IBE3 GENNUMCORPORATION-GS1582-IBE3
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OCR Text |
...on ? support for hvf or eia/cea-861 timing input ? automatic standard detection and indication ? enhanced smpte 352m payload identifier generation and insertion ? trs, crc, anc data checksum, and line number calculation and insertion ? ed... |
Description |
IC,MOT,MC145026P, DIP-16, ENCODER 9 LINE SIMPLEX
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File Size |
1,239.13K /
114 Page |
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it Online |
Download Datasheet |
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Atmel Corp. Atmel, Corp.
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Part No. |
ATTINY261V-10PU ATTINY261-20PU
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OCR Text |
...am memory flash (attiny261/461/861) endurance: 10,000 write/erase cycles ? 128/256/512 by tes in-system prog rammable eeprom (a ttiny261/461/861) endurance: 100,000 write/erase cycles ? 128/256/512 bytes internal sram (attiny261/461/861) ... |
Description |
8-bit Microcontroller with 2/4/8K Bytes In-System Programmable Flash 8-BIT, FLASH, 20 MHz, RISC MICROCONTROLLER, PDIP20
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File Size |
275.25K /
19 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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