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  9.8 Datasheet PDF File

For 9.8 Found Datasheets File :: 64791    Search Time::2.172ms    
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    INFINEON[Infineon Technologies AG]
Part No. SPU09P06PL SPD09P06PL
OCR Text ... Crss IF 10 1 0 0.6 98% typ 200 98 % 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -20 20 60 100 typ. 2% C Tj 180 Tj 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s -10 2 SPD09P...
Description Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.25
SIPMOS Power-Transistor
From old datasheet system

File Size 228.11K  /  8 Page

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INFINEON[Infineon Technologies AG]
Part No. SPU10N10 SPD10N10
OCR Text ... 3.6 3.2 2.8 2.4 typ max 98% typ 2.0 1.6 min 1.2 0.8 0.4 0.0 -60 -20 20 60 100 140 C -20 20 60 100 C 160 200 Tj Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 4 Forward...
Description SIPMOS Power Transistor
SIPMOS功率晶体

File Size 123.81K  /  8 Page

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    LT1122DCN8PBF

Linear Technology
Part No. LT1122DCN8PBF
OCR Text ...tion ratio v cm = 10v 83 99 80 98 db input voltage range (note 4) 10.5 11 10.5 11 v psrr power supply rejection ratio v s = 10v to 18v 86 103 82 101 db input noise voltage 0.1hz to 10hz 3.0 3.3 v p-p input noise voltage density f o = 100...
Description Fast Settling, JFET Input Operational Amplifier

File Size 232.64K  /  14 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPU11N10 SPD11N10
OCR Text ...20 20 60 100 140 C VGS(th) 98% typ 550 3 2.5 2 ID =21A 1.5 -65 200 -35 -5 25 55 85 115 C 175 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 3 12 Forward ch...
Description Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=179mOhm, 11A, NL
SIPMOS Power-Transistor

File Size 489.50K  /  8 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPU30N03S2-08
OCR Text ...V GS(th) 3 2.5 83 A 98% 2 -20 20 60 100 140 C 200 0 -60 -20 20 60 100 C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 4 12 Forward character. of re...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, IPAK, RDSon = 8.2mOhm, 30A, NL
OptiMOS Power-Transistor

File Size 256.65K  /  8 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPW11N60CFD
OCR Text ...0 -60 -20 20 60 100 C 15 98% typ 10 5 0 180 0 2 4 6 8 10 12 14 16 Tj Page 6 V 20 VGS 2003-12-23 SPW11N60CFD 9 Typ. gate charge VGS = f (QGate) parameter: ID = 11 A pulsed 16 V SPW11N60CFD 10 Forward chara...
Description for lowest Conduction Losses & fastest Switching
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor

File Size 152.09K  /  12 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPW12N50C3
OCR Text ... 1.8 32 1.6 1.4 1.2 1 0.8 0.6 98% 0.4 0.2 0 -60 -20 20 60 100 C RDS(on) 28 ID 24 20 16 12 150C typ 8 4 0 0 180 1 2 3 4 5 6 7 8 Tj V 10 VGS 11 Typ. gate charge VGS = f (QGate) 1...
Description for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor

File Size 252.15K  /  11 Page

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    SI9948AEY

Vishay Siliconix
Fairchild Semiconductor
Part No. SI9948AEY
OCR Text ...: 70759 S-57253--Rev. B, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 93 Symbol Typ Max 62.5 Unit _C/W 2-1 Si9948AEY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Thresho...
Description P-Channel Enhancement-Mode MOSFET Dual
Dual P-Channel 60-V (D-S), 175C MOSFET
Dual P-Channel 60-V (D-S), 175C MOSFET
Dual P-Channel 60-V (D-S)/ 175C MOSFET

File Size 55.60K  /  4 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPW17N80C2
OCR Text ... 0.6 7V 8V 10V 20V 0.4 98% typ 0.2 5 10 15 20 25 VDS V 35 0.0 -60 -20 20 60 100 C 180 Tj Page 6 2000-05-29 Preliminary data 9 Typ. transfer characteristics SPW17N80C2 10 G...
Description Cool MOS Power Transistor

File Size 135.45K  /  11 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPW52N50C3
OCR Text ...4 0.2 0.16 0.12 0.08 0.04 0 -60 98% typ 80 40 -20 20 60 100 C 180 0 0 1 2 3 4 5 6 7 8 Tj V 10 VGS Rev. 2.0 Page 6 2004-03-16 SPW52N50C3 9 Typ. gate charge VGS = f (QGate...
Description Cool MOS Power Transistor
Cool MOS⑩ Power Transistor
for lowest Conduction Losses & fastest Switching

File Size 248.22K  /  11 Page

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