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STMicroelectronics N.V. 意法半导
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Part No. |
M28C64-A25NS1T M28C64-A20MS1T M28C64-A20MS3T M28C64-A20MS6T M28C64-A15MS3T M28C64-A30WNS1T M28C64-A90WNS1T M28C64-A30WNS3T M28C64-A90WNS3T M28C64-A15WMS6T M28C64-A25WMS6T M28C64-A30WMS6T M28C64-A15WBS6T M28C64-A25WBS6T M28C64-A30WBS6T M28C64-30KA3T M28C64-A30KA3T M28C64-A20KA3T M28C64-A30KA1T M28C64-A30BS6T M28C64-A30NS3T M28C64-A30WKA3T M28C64-A30WKA6T M28C64-A30WMS1T M28C64-A30BS1T M28C64-A30BS3T M28C64-A30MS1T M28C64-A30NS6T M28C64-A30WMS3T M28C64-A30KA6T M28C64-A30MS3T M28C64-A30MS6T M28C64-A30NS1T M28C64-A30WBS3T M28C64-A30WNS6T M28C64-A90BS1T M28C64-A90BS3T M28C64-A90BS6T M28C64-A90MS6T M28C64-A90NS1T M28C64-A90NS3T M28C64-A90WBS6T M28C64-A90WKA3T M28C64-A90WKA6T M28C64-A90WMS1T M28C64-A90WMS3T M28C64-A90KA1T M28C64-A90KA3T M28C64-A90KA6T M28C64-A90MS1T M28C64-A90MS3T M28C64-A90WMS6T M28C64-A90WNS6T M28C64-A20NS3T M28C64-A20KA1T M28C64-A20KA6T M28C64-A20NS1T M28C64-A25WNS1T M28C64-A25WNS3T M28C64-A25WNS6T M28C64-A25KA3T M28C64-A25BS1T M28C64-A25BS3T M28C64-A25BS6T M28C64-A15BS6T M28C64-A25KA1T M28C64-A15BS1T M28C64-A15BS3T M28C64-30NS3T M28C64-30NS6T M28C64-30NS1T M28C64-15NS3T M28C64-15NS6T M28C64-25MS1T M28C64-15NS1T M28C64-A90WBS3T M28C64-A90WKA1T M28C64-A90NS6T M28C64-A90
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Description |
64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection 64千位8K的8并行EEPROM,带有软件数据保 SWITCH, DPDT; Thread size:1/4 x 40UNS; Switch function type:DPDT On-On; Current, contact @ contact voltage AC max:3A; Current, contact @ contact voltage DC max:8A; Material, contact:Silver; Resistance, contact:10mR; Temp, op. RoHS Compliant: Yes SWITCH, DPDT, LOCKING; Thread size:1/4 x 40UNS; Switch function type:DPDT On-On; Current, contact @ contact voltage AC max:3A; Current, contact @ contact voltage DC max:8A; Material, contact:Silver; Resistance, contact:10mR; Temp, RoHS Compliant: Yes SWITCH, DPDT, BIASED; Thread size:1/4 x 40UNS; Switch function type:DPDT On-Mom; Current, contact @ contact voltage AC max:3A; Current, contact @ contact voltage DC max:8A; Material, contact:Silver; Resistance, contact:10mR; Temp, RoHS Compliant: Yes Toggle Switch; Circuitry:SPDT; Switch Operation:On-Off-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Solder Lug; Leaded Process Compatible:Yes; Mounting Type:Solder Lug RoHS Compliant: Yes 64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection
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File Size |
156.42K /
24 Page |
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意法半导 EEPROM STMicroelectronics N.V.
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Part No. |
M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-SDW6T M24C16-SDW3T M24C16-SDS3T M24C16-SDS6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/S M24C08-WDS3 M24C08-WDS3G M24C08-WDS6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/S M24C08-WDS6G M24C08-WDS6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDS3/W M24C04-RMN3TP/S M24C08-WDW3G M24C08-WDS3/S M24C01-RBN6TP/W M24C08-WDS3P M24C01-WMN3TP/S M24C01-WDW6TP/S M24C01-WMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/W M24C04-RDS3G M24C04-WBN6T/W M24C04-RDS6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-WMN3/S M24C02-WMN6/W M24C08-WBN3G/S M24C16-WBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-WBN3G/S M24C02-RBN3G/S M24C02-WBN3G/S M24C04-RBN3G/S M24C04-WBN3G/S
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Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes CRYSTAL 9.84375MHZ 10PF SMD UHF power transistor NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD MMIC variable gain amplifier AB 3C 3#12 SKT RECP Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V XTL, OSC, 50.000 MHZ, 100PPM Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V CONNECTOR ACCESSORY PNP/PNP matched double transistors IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP AB 17C 17#16 PIN RECP 45 V, 100 mA NPN general-purpose transistors NPN/PNP general purpose transistor - Description: Matched Pair IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015 CRYSTAL 4.897MHZ 20PF SMD Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V POT 200 OHM 3/4 RECT CERM MT Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 600 V Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) RoHS Compliant: Yes CRYSTAL 6.7458MHZ 20PF SMD Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes RES ARRAY 24 OHM 8TRM 4RES SMD SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; Package: SOIC-W; No of Pins: 8; Container: Box NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300 High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; VThyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V AB 4C 4#12 PIN PLUG Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz Silicon PIN diode NPN 14 GHz wideband transistor PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V HDWR PLATE SER 3 FRNT MNT BLK OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V 16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM 8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM RECTIFIER SBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
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File Size |
144.80K /
25 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation 光电耦合 Fairchild Semiconductor, Corp.
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Part No. |
H11A2 H11A3 4N35H11A4 H11A4 4N37 H11A1V 4N37.3SD 4N37.S 4N37.SD 4N37.W 4N37S 4N37SR2 4N37SR2V 4N37SV 4N37T 4N37TV 4N37V 4N25300 H11A3SD H11A23S H11A23SD H11A1300 H11A1300W H11A1W H11A2W H11A33S H11A3300W H11A33SD H11A5SD H11A53SD H11A3W H11A4SD H11A43SD H11A5W H11A2300 H11A2300W H11A1SD H11A5300 H11A5300W H11A13S H11A13SD 4N25FM 4N25FVM 4N25M 4N25S H11A3FM H11A3FR2M H11A3FR2VM H11A3FVM H11A4FR2VM H11A4FVM H11A4FR2M H11A3SR2M H11A3SR2VM H11A1FVM H11A1FR2VM H11A1SM H11A1FM H11A5FM H11A5FR2M H11A5FR2VM H11A2SR2M H11A2SR2VM H11A3TM H11A3TVM 4N37300 4N37300W 4N36300 4N36300W 4N363S H11A4SR2M H11A4SR2VM 4N36W 4N35300 4N35300W 4N36SD 4N36SR2VM 4N36SR2M 4N36SM 4N36SVM H11A1TVM H11A1TM H11A2TVM H11A2TM 4N35FR2VM H11A5TVM 4N35SR2VM 4N35TVM 4N35SVM 4N25TVM 4N35SD 4N26FVM 4N26FM 4N26FR2VM H11A2VM 4N27W 4N25 4N26 4N37.3S 4N28V 4N28S 4N25.3SD 4N27.W H11A3.SD 4N26SR2-M H11A1.300W 4N35SV 4N35.S 4N27V 4N27T 4N28T H11A3.3SD H11A3.300 H11A5.SD H11A3.300W 4N36S 4N36S-M 4N36SR2-M 4N36SV-M 4N36.SD 4N26T-M 4N35T-M 4N27T-M 4N36SR2V 4N35.W 4N36T-M 4N37T-M 4N25T-M 4N26.W 4N28T-M H11A3.W H11A4.SD H11A5.3S H11A4.3SD 4N36TV H11A5.W 4N36V 4N35TV 4N36.3SD 4N35.3SD 4N37.300 H11A1.SD H11A1S H11A5.300W 4N25.W 4N26T
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Description |
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 6-Pin DIP Package Phototransistor Output Optocoupler DIODE SWITCHING SINGLE 200V 200mA-Io 200mW 50ns-trr SOT-323 3K/REEL DIODE SWITCHING DUAL ISOLATED 250V 200mA-Io 200mW 50ns-trr SOT-363 3K/REEL DIODE SCHOTTKY 40V 200MA SOT523 0.5mm Pitch DIL Vertical SMT Female Assembly, 4mm height, location pegs, hold-down tabs, tin, 5 5-way, Tape & Reel packing KPT06A18-11SF26F97 DIODE ZENER SINGLE 200mW 22Vz 5mA-Izt 0.0567 0.1uA-Ir 15.4 SOT-323 3K/REEL CONNECTOR ACCESSORY Tuner custom IC 32-TSSOP DIODE SWITCHING SINGLE 250V 200mA-Io 200mW 50ns-trr SOT-323 3K/REEL DIODE SWITCHING SINGLE 120V 200mA-Io 200mW 50ns-trr SOT-323 3K/REEL Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Fluoropolymer; Jacket Color:Black; Leaded Process Compatible:Yes; Voltage Nom.:30V RoHS Compliant: Yes Dual Pole Combination: Form-A & B Incandescent Lamp; Supply Voltage:30VDC; Lamp Base Type:Bayonet; Power Rating:10W; Bulb Size:T-20; Average Rated Bulb Life:2000h; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No OSC 5V SMT 7X5 CMOS PROGRM IC,MODEM,CODEC,CSP1034S,38P,TSSOP 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 一般用途的6引脚光电晶体管光电耦合 KPT06F12-3SF187 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER 0.5mm Pitch DIL Vertical SMT Female Assembly, 4mm height, location pegs, hold-down tabs, tin, 5 5-way, Tape & Reel packing 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER INDUCTOR, 10UH 20%
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208.68K /
15 Page |
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