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    CY7C1381DV25-100AXC CY7C1383DV25-100AXC CY7C1381DV25-100AXI CY7C1383DV25-100AXI CY7C1381FV25 CY7C1381FV25-100BGC CY7C138

Cypress Semiconductor
Part No. CY7C1381DV25-100AXC CY7C1383DV25-100AXC CY7C1381DV25-100AXI CY7C1383DV25-100AXI CY7C1381FV25 CY7C1381FV25-100BGC CY7C1381FV25-100BGI CY7C1381FV25-100BGXC CY7C1381FV25-100BGXI CY7C1381FV25-133BGC CY7C1381FV25-133BGI CY7C1381FV25-133BGXC CY7C1381FV25-133BGXI CY7C1383FV25 CY7C1383FV25-100BGC CY7C1383FV25-100BGI CY7C1383FV25-100BGXC CY7C1383FV25-100BGXI CY7C1383FV25-133BGC CY7C1383FV25-133BGI CY7C1383FV25-133BGXC CY7C1381DV25-100BZI CY7C1383FV25-133BGXI CY7C1381DV25-100BZC
OCR Text ... synchronous inputs include all addresses, all data inputs, address pipelining chip enable (CE1), depth expansion chip enables (CE2 and CE3 [2]), burst control inputs (ADSC, ADSP, and ADV), write enables (BWx, and BWE), and global write (GW...
Description 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM

File Size 1,009.75K  /  28 Page

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    EM48AM1684VTC09 EM488M1684VTC-75FE EM484M1684VTC-8FE EM481M1684VTC-8FE EM48AM1684VTC-8FE EM48BM1684VTC-8FE EM481M1684VTC

Eorex Corporation
Part No. EM48AM1684VTC09 EM488M1684VTC-75FE EM484M1684VTC-8FE EM481M1684VTC-8FE EM48AM1684VTC-8FE EM48BM1684VTC-8FE EM481M1684VTC-75FE EM484M1684VTC-75FE EM48AM1684VTC-7FE EM48BM1684VTC-7FE EM481M1684VTC-7FE EM488M1684VTC-7FE EM482M1684VTC-8FE EM48AM1684VTC-75F EM482M1684VTC-75FE EM48AM1684VTC-75FE EM484M1684VTC-7FE EM488M1684VTC-8FE EM482M1684VTC-7FE
OCR Text ...Row Address Strobe) Latches Row addresses on the positive rising edge of the CLK with /RAS "L". Enables row access & pre-charge. (Column Address Strobe) Latches Column addresses on the positive rising edge of the CLK with /CAS low. Enables ...
Description 256Mb (4M?4Bank?16) Synchronous DRAM
256Mb (4M×4Bank×16) Synchronous DRAM

File Size 320.12K  /  18 Page

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    EM48AM1684VTD EM48AM1684VTD-6F EM48AM1684VTD-6FE EM48AM1684VTD-7FE EM48AM1684VTD-75FE

Eorex Corporation
Part No. EM48AM1684VTD EM48AM1684VTD-6F EM48AM1684VTD-6FE EM48AM1684VTD-7FE EM48AM1684VTD-75FE
OCR Text ...Row Address Strobe) Latches Row addresses on the positive rising edge of the CLK with /RAS "L". Enables row access & pre-charge. (Column Address Strobe) Latches Column addresses on the positive rising edge of the CLK with /CAS low. Enables ...
Description 256Mb (4M?4Bank?16) Synchronous DRAM
256Mb (4M×4Bank×16) Synchronous DRAM

File Size 222.30K  /  19 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HYM7V75AE831ATHG-10P
OCR Text ...ition of 64m bytes memory. all addresses, data and control inputs are latched on the rising edge of the master clock input. the data paths are internally pipelined to achieve very high bandwidths. features 1.500 ? (38.10mm) pcb height ...
Description 8M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168

File Size 305.95K  /  14 Page

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    GS832218B-133 GS832218B-133I GS832218B-150 GS832218B-150I GS832218B-166 GS832218B-166I GS832218B-200 GS832218B-200I GS83

ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
Part No. GS832218B-133 GS832218B-133I GS832218B-150 GS832218B-150I GS832218B-166 GS832218B-166I GS832218B-200 GS832218B-200I GS832218B-225 GS832218B-225I GS832218B-250 GS832218B-250I GS832272C-133 GS832272C-133I GS832272C-150 GS832272C-150I GS832272C-166 GS832272C-166I GS832272C-200 GS832272C-200I GS832272C-225 GS832272C-225I GS832218 GS832218B GS832218E GS832218E-133 GS832218E-133I GS832218E-150 GS832218E-150I GS832218E-166 GS832218E-166I GS832218E-200 GS832218E-225 GS832218E-225I GS832218E-250 GS832218E-250I GS832236 GS832236B GS832236B-133 GS832236E-133 GS832236E-133I GS832236E-150 GS832236E-150I GS832236E-166 GS832236E-166I GS832236E-200 GS832236E-200I GS832236E-225 GS832236E-225I GS832236E-250 GS832236E-250I GS832236B-250 GS832236B-200 GS832236B-133I GS832236B-166 GS832236B-225 GS832236B-150 GS832236B-200I GS832236B-225I GS832236B-150I GS832236B-166I GS832236B-250I GS832272 GS832272C-250 GS832272C-250I
OCR Text ...king chip set support. Controls addresses, data I/Os, chip enable (E1), address burst control inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW, GW) are synchronous and are controlled by a positive-edgetriggered clock input (CK). O...
Description 64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs

File Size 833.90K  /  41 Page

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    HSD32M72D16R-10L HSD32M72D16R-12N HSD32M72D16R-13N HSD32M64D16R

Hanbit Electronics Co.,Ltd
http://
Part No. HSD32M72D16R-10L HSD32M72D16R-12N HSD32M72D16R-13N HSD32M64D16R
OCR Text ... ~ A11 Address Row/column addresses are multiplexed on the same pins. Row address : RA0 ~ RA11, Column address : CA0 ~ CA9 BA0 ~ BA1 Bank select address Selects bank to be activated during row address latch time. Selects bank...
Description Synchronous DRAM Module 256Mbyte (32Mx64bit), DIMM with based on 16Mx8, 4Banks, 4K Ref., 3.3V

File Size 172.69K  /  12 Page

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    LICAL-ENC-MS001 LICAL-DEC-MS001 MDEV-LICAL-MS

ETC
List of Unclassifed Manufacturers
Part No. LICAL-ENC-MS001 LICAL-DEC-MS001 MDEV-LICAL-MS
OCR Text ...iple devices having conflicting addresses. The MS Series decoder allows the recognition of individual output lines to be easily defined for each transmitter by the manufacturer or the user. This enables the creation of unique user groups an...
Description MS SERIES ENCODER DATA GUIDE

File Size 196.65K  /  7 Page

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    M12L32162A0712 M12L32162A-7BVG

Elite Semiconductor Memory Technology Inc.
Part No. M12L32162A0712 M12L32162A-7BVG
OCR Text ...r down in standby. Row / column addresses are multiplexed on the same pins. Row address : RA0 ~ RA11, column address : CA0 ~ CA7 Selects bank to be activated during row address latch time. Selects bank for read/write during column address l...
Description 1M x 16Bit x 2Banks Synchronous DRAM

File Size 690.27K  /  28 Page

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    MMO-6RF MBB-6 MBB-2 MCH-6

Gamewell-FCI by Honeywell
Part No. MMO-6RF MBB-6 MBB-2 MCH-6
OCR Text ... that allows one, two, or three addresses to be turned off to free these addresses for other purposes. Each relay has its own status LED that flashes to indicate proper polling and lights steady when the circuit has been activated. Two (2),...
Description Multi-mod relay output

File Size 67.49K  /  2 Page

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    A29L16007

AMIC Technology
Part No. A29L16007
OCR Text ... and verifies data at specified addresses Typical 100,000 program/erase cycles per sector 20-year data retention at 125C - Reliable operation for the life of the system CFI (Common Flash Interface) compliant - Provides device-specific infor...
Description 2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory

File Size 538.99K  /  42 Page

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