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    1.5SMC68AT3 1.5SMC24AT3 1.5SMC51AT3 1.5SMC30AT3 1.5SMC13AT 1.5SMC56AT3 1.5SMC33AT3 1.5SMC12AT3 1.5SMC10AT3 1.5SMC15AT3G

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ONSEMI[ON Semiconductor]
Part No. 1.5SMC68AT3 1.5SMC24AT3 1.5SMC51AT3 1.5SMC30AT3 1.5SMC13AT 1.5SMC56AT3 1.5SMC33AT3 1.5SMC12AT3 1.5SMC10AT3 1.5SMC15AT3G 1.5SMC7.5AT3 1.5SMC8.2AT3 1.5SMCXXXAT3 15SMC68AT3 1.5SMCXXXAT3G 1.5SMC11AT3 1.5SMC13AT3 1.5SMC15AT3 1.5SMC16AT3 1.5SMC18AT3 1.5SMC20AT3 1.5SMC22AT3 1.5SMC27AT3 1.5SMC36AT3 1.5SMC39AT3 1.5SMC43AT3 1.5SMC47AT3 1.5SMC6.8AT3 1.5SMC62AT3G 1.5SMC82AT3 1.5SMC9.1AT3 1.5SMC91AT3 1.5SMC62AT3 1.5SMC16A 1.5SMC22A 1.5SMC24A 1.5SMC27A 1.5SMC43A 1.5SMC47A 1.5SMC51A 1.5SMC56A 1.5SMC68A 1.5SMC82A 1.5SMC15A 1.5SMC62A 1.5SMC75A 1.5SMC75AT3
OCR Text ... voltage level. 7. VBR measured at pulse test current IT at an ambient temperature of 25C. 8. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data - 1500 Watt at the beginning of this group. http://onsemi.com ...
Description Zener Diode
Transistor Suppressor
High Power
1500 Watt Peak Power Zener Transient Voltage Suppressors
ELR 2/1-230Z
1500 Watt Peak Power Zener Transient Voltage Suppressors 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

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    1N5356B 1N5364B 1N5347B 1N5349B 1N5339B 1N5371B 1N5338B 1N5352B 1N5366B 1N5374B 1N5372B 1N5375B 1N5333B 1N5378B 1N5344B

Microsemi, Corp.
Motorola Mobility Holdings, Inc.
Motorola Inc
Motorola, Inc.
MOTOROLA[Motorola Inc]
ON Semi
MOTOROLA[Motorola, Inc]
Diotec Elektronische
Part No. 1N5356B 1N5364B 1N5347B 1N5349B 1N5339B 1N5371B 1N5338B 1N5352B 1N5366B 1N5374B 1N5372B 1N5375B 1N5333B 1N5378B 1N5344B 1N5355B 1N5353B 1N5342B 1N5388B 1N5359B 1N5345B 1N5381B 1N5363B 1N5383B 1N5336B ON0008 1N5341B 1N5361B 1N5334B 1N5335B 1N5337B 1N5340B 1N5343B 1N5346B 1N5348 1N5348B 1N5350B 1N5351B 1N5357B 1N5358B 1N5360B 1N5362B 1N5365B 1N5367B 1N5368B 1N5369B 1N5370B 1N5373B 1N5376B 1N5377B 1N5379B 1N5380B 1N5382B 1N5384B 1N5385B 1N5386 1N5386B 1N5387B 1N5333BTHRU1N5388B 1N5354B
OCR Text ...llows: VZ measurements are made at 10% and then at 50% of the IZ max value listed in the electrical characteristics table. The test current time duration for each VZ measurement is 40 10 ms. (TA = 25C +8, -2C). Mounting contact located as ...
Description    5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 16 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 47 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 12 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 3.3 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.300 VOLTS 5瓦稳压稳压二极管3.30
MOSFET P-CH 250V 200MA SOT-89
500 mW DO-35 Glass Zener Voltage Regulator Diodes
From old datasheet system
Silicon-Power-Z-Diodes (non-planar technology)

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    1N6637US 1N5969US 1N5968US 1N6632US 1N6633US 1N6634US 1N6635US 1N6636US

CDI-DIODE[Compensated Deuices Incorporated]
Compensated Devices Incorporated
Part No. 1N6637US 1N5969US 1N5968US 1N6632US 1N6633US 1N6634US 1N6635US 1N6636US
OCR Text ...STANCE: (ROJEC): 10 C/W maximum at L = 0 THERMAL IMPEDANCE: (ZOJX): 3 C/W maximum POLARITY: Diode to be operated with the banded (cathode) end positive. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is ...
Description 5 WATT ZENER DIODES
Zener Diodes(齐纳二极
surface mount silicon Zener diodes

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    2764A M27C64A-30C1TR M27C64A-30C1X M27C64A-30C6TR M27C64A-30C6X M27C64A-30F1TR M27C64A-30F1X M27C64A-30F6TR M27C64A-30F6

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. 2764A M27C64A-30C1TR M27C64A-30C1X M27C64A-30C6TR M27C64A-30C6X M27C64A-30F1TR M27C64A-30F1X M27C64A-30F6TR M27C64A-30F6X M27C64A-20C1TR M27C64A-20C1X M27C64A-20C6TR M27C64A-20C6X M27C64A-25C1TR M27C64A-25F6X M27C64A-25F6TR M27C64A-15C6X M27C64A-15F1X M27C64A-15F6X M27C64A-15C1TR M27C64A-15F6TR M27C64A-15C6TR M27C64A-15F1TR M27C64A-20F1TR M27C64A-25F1X M27C64A-25F1TR M27C64A-25C1X M27C64A-25C6TR M27C64A-25C6X M27C64A-15C1X
OCR Text ...nly and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device rel...
Description 64K (8K x 8) UV EPROM and OTP ROM 64K的(8K的8)紫外线EPROM和检察官办公室光

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    27C4001 M27C4001 M27C4001-10B1 M27C4001-10B1TR M27C4001-10B1X M27C4001-10B6TR M27C4001-10B6X M27C4001-10C1TR M27C4001-10

ST Microelectronics
STMicroelectronics
Part No. 27C4001 M27C4001 M27C4001-10B1 M27C4001-10B1TR M27C4001-10B1X M27C4001-10B6TR M27C4001-10B6X M27C4001-10C1TR M27C4001-10C1X M27C4001-10C6TR M27C4001-10C6X M27C4001-10F1TR M27C4001-10F1X M27C4001-10F6TR M27C4001-10F6X M27C4001-10L1TR M27C4001-10L1X M27C4001-10L6TR M27C4001-10L6X M27C4001-10N1TR M27C4001-10N1X M27C4001-10N6TR M27C4001-10N6X M27C4001-10XB1TR M27C4001-10XB1X M27C4001-10XB6TR M27C4001-10XB6X M27C4001-10XC1TR M27C4001-10XC1X M27C4001-10XC6TR M27C4001-10XC6X M27C4001-10XF1TR M27C4001-10XF1X M27C4001-10XF6TR M27C4001-10XF6X M27C4001-10XL1TR M27C4001-10XL1X M27C4001-10XL6TR M27C4001-10XL6X M27C4001-10XN1TR M27C4001-10XN1X M27C4001-10XN6TR M27C4001-10XN6X M27C4001-12B1TR M27C4001-12B1X M27C4001-12B6TR M27C4001-12B6X M27C4001-12C1TR M27C4001-12C1X M27C4001-12C6TR M27C4001-12C6X M27C4001-12F1TR M27C4001-12F1X M27C4001-12F6TR M27C4001-12F6X M27C4001-12L1TR M27C4001-12L1X M27C4001-12L6TR M27C4001-12L6X M27C4001-12N1TR M27C4001-12N1X M27C4001-12N6TR M27C4001-12N6X M27C4001-12XB1TR M27C4001-12XB1X M27C4001-12XB6TR M27C4001-12XB6X M27C4001-12XC1TR M27C4001-12XC1X M27C4001-12XC6TR M27C4001-12XC6X M27C4001-12XF1TR M27C4001-12XF1X M27C4001-12XF6TR M27C4001-12XF6X M27C4001-12XL1TR M27C
OCR Text ...SUMPTION: - Active Current 30mA at 5MHz - Standby Current 100A 1 32 s s 32 1 s s s PROGRAMMING VOLTAGE: 12.75V 0.25V PROGRAMMING TIME: 100s/byte (typical) ELECTRONIC SIGNATURE - Manufacturer Code: 20h - Device Code: 41h ...
Description From old datasheet system
4 Mbit (512Kb x 8) UV EPROM and OTP EPROM
4 Mbit 512Kb x 8 UV EPROM and OTP EPROM

File Size 110.77K  /  16 Page

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    2N6295

SEME-LAB[Seme LAB]
Part No. 2N6295
OCR Text ...Current Total Power Dissipation at Tcase = 25C Derate above 25C Operating and Storage Junction Temperature Range 80V 80V 5V 4A 8A 80mA 50W 0.286 W/C -65 to 200C THERMAL CHARACTERISTICS RJC Thermal Resistance, Junction to Case 3.5 C/W ...
Description DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR

File Size 14.63K  /  2 Page

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    2SA1096 2SA1096A 2SC2497A 2SC2497

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1096 2SA1096A 2SC2497A 2SC2497
OCR Text ...odification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements...
Description    Silicon NPN epitaxial planar type(For low-frequency power amplification)

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    2SA1104

WINGS[Wing Shing Computer Components]
Part No. 2SA1104
OCR Text ...rrent gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time CONDITIONS VCB=100V VEB=5V IC=1mA IC = 3.5A; IB = 0.35A IC = 3A; VCE = 5V IC = 1A; VCE = 12V VCB = 10V TYP 120 50 20...
Description Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

File Size 78.06K  /  1 Page

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    2SA1194 2SA1194K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA1194 2SA1194K
OCR Text ...rage temperature Note: 1. Value at TC = 25C Tj Tstg 1 Rating -60 -60 -7 -1 -2 1 8 150 -55 to +150 Unit V V V A A W W C C 2SA1194(K) Electrical Characteristics (Ta = 25C) Item Symbol Min -60 -- -- 1000 -- -- -- -- Typ -- -- -- --...
Description Silicon PNP Epitaxial

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    2SA2010

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2010
OCR Text ...easure on the ceramic substrate at 15 x 15 x 0.6 mm3. I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer r...
Description    Silicon PNP epitaxial planer type

File Size 48.79K  /  2 Page

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