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FR7809D 4040M L1131C CTCDR PM6681A 90816 5MTCX 2SC5297
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  costeffectiveness Datasheet PDF File

For costeffectiveness Found Datasheets File :: 64    Search Time::1.328ms    
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    IRF640L IRF640S

IRF[International Rectifier]
Part No. IRF640L IRF640S
OCR Text ...e design, low on-resistance and costeffectiveness. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing sur...
Description Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=18A)
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
HEXFET? Power MOSFET

File Size 224.71K  /  10 Page

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    AP4501M

Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Part No. AP4501M
OCR Text ...e design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 D1 D2 G2 S1 ...
Description N AND P-CHANNEL ENHANCEMENT N和P沟道强化

File Size 111.47K  /  11 Page

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    AP3403H AP3403J

Advanced Power Electronics Corp.
Part No. AP3403H AP3403J
OCR Text ...stance, extremely efficient and costeffectiveness device. The TO-252/TO-251 package is universally used for all commercialindustrial application. G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@...
Description P-CHANNEL ENHANCEMENT MODE

File Size 71.84K  /  4 Page

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    AP2030M

Electronic Theatre Controls, Inc.
ETC[ETC]
Part No. AP2030M
OCR Text ...e design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 D1 D2 G2 S1 ...
Description 30V N-Channel PowerTrench MOSFET
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 111.45K  /  11 Page

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    A-POWER[Advanced Power Electronics Corp.]
Part No. AP4575M
OCR Text ...e design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. ID P-CH BVDSS RDS(ON) ...
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 127.22K  /  7 Page

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    SSM4532M

List of Unclassifed Manufacturers
ETC[ETC]
Silicon Standard Corp.
Part No. SSM4532M
OCR Text ...e design, low on-resistance and costeffectiveness. The SO-8 package is widely preferred for commercial and industrial surface mount applications and is well suited for low-voltage applications such as DC/DC converters. G1 D1 D2 G2...
Description COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

File Size 186.32K  /  11 Page

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    DSP Group
Part No. D16559
OCR Text ...es unparalleled performance and costeffectiveness, as well as critical time-to-market capabilities in this new generation of chip technology. www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com D16000 System-On-Chip Fami...
Description D16000 System-on-Chip Family

File Size 160.70K  /  4 Page

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    HIRF740 HIRF740F IRF740F

HSMC CORP.
Hi-Sincerity Mocroelectronics
Part No. HIRF740 HIRF740F IRF740F
OCR Text ...e design, low on-resistance and costeffectiveness. 2 3 1 Features * Dynamic dv/dt Rating * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements 1 3-Lead Plastic TO-220FP Package Code: ...
Description N-Channel Power MOSFET (400V, 10A)

File Size 46.93K  /  4 Page

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    AP4920M

Advanced Power Electronics Corp.
Part No. AP4920M
OCR Text ...e design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 S1 G2 S2 Abso...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 77.22K  /  6 Page

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    AP4953D

Advanced Power Electronics Corp.
Part No. AP4953D
OCR Text ...e design, low on-resistance and costeffectiveness. G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous D...
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 70.12K  /  4 Page

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