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  eoff Datasheet PDF File

For eoff Found Datasheets File :: 4828    Search Time::1.344ms    
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    GA200TS60U

IRF[International Rectifier]
Part No. GA200TS60U
OCR Text ...ge Qgc td(on) tr td(off) tf Eon eoff (1) Ets (1) Cies Coes Cres t rr I rr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay T...
Description HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT

File Size 299.60K  /  10 Page

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    GA250TS60U

IRF[International Rectifier]
Part No. GA250TS60U
OCR Text ...ge Qgc td(on) tr td(off) tf Eon eoff (1) Ets (1) Cies Coes Cres trr Irr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Tim...
Description 600V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 226.75K  /  10 Page

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    GA75TS60U

IRF[International Rectifier]
Part No. GA75TS60U
OCR Text ...ge Qgc td(on) tr td(off) tf Eon eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time...
Description    HALF-BRIDGE IGBT INT-A-PAK

File Size 213.44K  /  10 Page

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    HGTG11N120CND

FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG11N120CND
OCR Text ... td(ON)I trI td(OFF)I tfI EON eoff IGBT and Diode at TJ = 25oC, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10 , L = 2mH, Test Circuit (Figure 20) (c)2001 Fairchild Semiconductor Corporation HGTG11N120CND Rev. B HGTG11N120CND Elec...
Description 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 108.55K  /  8 Page

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    HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST
OCR Text ...NOTES: 4. Turn-Off Energy Loss (eoff) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were t...
Description 1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape &amp; Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT

File Size 175.79K  /  8 Page

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    FGH75N60SF FGH75N60SFTU

Fairchild Semiconductor, Corp.
Part No. FGH75N60SF FGH75N60SFTU
OCR Text ...istics td(on) tr td(off) tf Eon eoff Ets td(on) tr td(off) tf Eon eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Tim...
Description Discrete IGBT
IGBT, TO-247AB ROHS COMPLIANT PACKAGE-3
600V, 75A Field Stop IGBT

File Size 678.48K  /  8 Page

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    HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL
OCR Text ...ON)I trI td(OFF)I tfI EON1 EON2 eoff td(ON)I trI td(OFF)I tfI EON1 EON2 eoff IGBT and Diode at TJ = 125oC, ICE = 12A, VCE = 390V, VGE = 15V, RG = 10, L = 500H, Test Circuit (Figure 24) TEST CONDITIONS IC = 250A, VGE = 0V VCE = 600V IC = 12A...
Description    600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk

File Size 170.23K  /  8 Page

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    HGTP12N60A4 HGT1S12N60A4S9A HGTG12N60A4 FAIRCHILDSEMICONDUCTORCORP-HGTP12N60A4NL

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60A4 HGT1S12N60A4S9A HGTG12N60A4 FAIRCHILDSEMICONDUCTORCORP-HGTP12N60A4NL
OCR Text ...ON)I trI td(OFF)I tfI EON1 EON2 eoff IGBT and Diode at TJ = 25oC ICE = 12A VCE = 390V VGE =15V RG = 10 L = 500H Test Circuit (Figure 20) (c)2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2 ...
Description 600V SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBTs 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBTs
600 V, SMPS N-Channel IGBT

File Size 180.89K  /  8 Page

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    HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A

Fairchild Semiconductor
Part No. HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A
OCR Text ... td(ON)I trI td(OFF)I tfI EON eoff td(ON)I trI td(OFF)I tfI EON eoff IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 25 L = 1mH Test Circuit (Figure 19) HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B HGT...
Description 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB

File Size 202.82K  /  7 Page

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    HGTP12N60B3 HGT1S12N60B3S FN4410

INTERSIL[Intersil Corporation]
Part No. HGTP12N60B3 HGT1S12N60B3S FN4410
OCR Text ...ON)I trI td(OFF)I tfI EON1 EON2 eoff IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 25 L = 1mH Test Circuit (Figure 17) 2 HGTP12N60B3, HGT1S12N60B3S Electrical Specifications PARAMETER Current Turn-On Dela...
Description From old datasheet system
27A, 600V, UFS Series N-Channel IGBTs
27A/ 600V/ UFS Series N-Channel IGBTs

File Size 111.87K  /  7 Page

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