|
|
|
Mitsubishi Electric Corporation
|
Part No. |
CR6PM-12 CR6PM-8
|
Description |
Integrated Gate Bipolar transistor (IGBt) Modules: t color='#FF0000'>250vt> MItSUBISHI SEMICONDUCtOR (tHYRIStOR) MEDIUM POWER USE INSULAtED tYPE, glass PASSIVAtION tYPE
|
File Size |
76.68K /
5 Page |
View
it Online |
Download Datasheet |
|
|
|
Mitsubishi Electric Corporation
|
Part No. |
CR8PM-12 CR8PM-8
|
Description |
Integrated Gate Bipolar transistor (IGBt) Modules: t color='#FF0000'>250vt> MItSUBISHI SEMICONDUCtOR (tHYRIStOR) MEDIUM POWER USE INSULAtED tYPE, glass PASSIVAtION tYPE
|
File Size |
71.52K /
5 Page |
View
it Online |
Download Datasheet |
|
|
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
Part No. |
FQI27N25 FQB27N25 FQB27N25tMAM002 FQB27N25tMNAM002 FQI27N25tU
|
Description |
t color='#FF0000'>250vt> N-Channel MOSFEt(漏源电压t color='#FF0000'>250vt>N沟道增强型MOS场效应管) 25.5 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFEt, tO-263 t color='#FF0000'>250vt> N-Channel MOSFEt(漏源电压50V的N沟道增强型MOS场效应管) t color='#FF0000'>250vt> N-Channel QFEt
|
File Size |
739.06K /
9 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|