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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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Part No. |
SFH485P Q62703-Q516 Q62703-Q2761 Q62703-Q2851 Q62703-Q2852
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OCR Text |
gaaias-ir-lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm)
SFH 485 P
Area not flat 0.6 0.4
2.54 mm spacing 0.8 0.4
5.0 4.2
Cathode 3.85 3.35
o5.1 o4.8
5.9 5.5
1.8 1.2
29 27
1.0 0.5 Chip position
0.6 0.... |
Description |
Super SIDELED High-Current LED 超SIDELED高电流LED gaaias-ir-lumineszenzdiode (880 nm)GaAIAs Infrared Emitter (880 nm) From old datasheet system
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File Size |
44.57K /
4 Page |
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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Part No. |
SFH426 SFH421 Q62703-P0331 Q62702-P1055
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OCR Text |
...fied.
Wesentliche Merkmale q GaAIAs-LED mit sehr hohem Wirkungsgrad q Gute Linearitat (Ie = f [IF]) bei hohen Stromen q Gleichstrom- (mit...IR-Reflow-Lotung geeignet. Bei Schwallotung wenden Sie sich bitte an uns.
Features q Very highly ... |
Description |
GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package 发动器红外光在SMT Lumineszenzdiode,在SMT Geh锓包GaAlA红外发射 GaAlAs-IR-Lumineszenzdiode in 3.0 SMT-Gehuse GaAlAs Infrared Emitter in SMT Package
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File Size |
52.40K /
5 Page |
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it Online |
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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Part No. |
SFH487P Q62703-Q517
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OCR Text |
gaaias-ir-lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm)
SFH 487 P
Area not flat
0.7 0.8 0.4 0.4
0.6 0.4
3.1 2.5 2.0 1.7 4.0 3.6
2.54 mm spacing
o3.1 o2.9
1.8 1.2 29 27 4.5 4.0 Cathode
3.5 Chip positio... |
Description |
gaaias-ir-lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm From old datasheet system
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File Size |
37.63K /
5 Page |
View
it Online |
Download Datasheet
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