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http:// ONSEMI[ON Semiconductor]
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Part No. |
1.5KE13CA 1.5KE110CA 1.5KE11CA 1.5KE130CA 1.5KE160CA 1.5KE20CA 1.5KE6.8CA 1.5KE7.5CA 1.5KE75CA 1.5KE8.2CA 1.5KE9.1CA 1.5KE91CA 1.5KE16CA 1.5KE62CA 1.5KE100CA 1.5KE10CA 1.5KE120CA 1.5KE150CA 1.5KE15CA 1.5KE170CA 1.5KE180CA 1.5KE18CA 1.5KE200CA 1.5KE220CA 1.5KE22CA 1.5KE24CA 1.5KE250CA 1.5KE27CA 1.5KE30CA 1.5KE33CA 1.5KE36CA 1.5KE39CA 1.5KE43CA 1.5KE47CA 1.5KE51CA 1.5KE56CA 1.5KE68CA 1.5KE82CA 15KE68CA 1.5KE100CARL4 1.5KE110CARL4 1.5KE120CARL4 1.5KE130CARL4 1.5KE150CARL4 1.5KE160CARL4 1.5KE170CARL4 1.5KE180CARL4 1.5KE220CARL4 1.5KE200CARL4 1.5KE250CARL4
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Description |
1500 Watt Mosorb Zener Transient Voltage Suppressors 1500 Watt mosorb zener transient voltage suppressors, 200V 1500 Watt mosorb zener transient voltage suppressors, 220V 1500 Watt mosorb zener transient voltage suppressors, 170V 1500 Watt mosorb zener transient voltage suppressors, 150V 1500 Watt mosorb zener transient voltage suppressors, 120V 1500 Watt mosorb zener transient voltage suppressors, 100V 1500 Watt Mosorb Zener Transient Voltage Suppressors 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE 1500 Watt mosorb zener transient voltage suppressors, 110V 1500 Watt mosorb zener transient voltage suppressors, 130V 1500 Watt mosorb zener transient voltage suppressors, 160V 1500 Watt mosorb zener transient voltage suppressors, 180V 1500 Watt mosorb zener transient voltage suppressors, 250V
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File Size |
58.22K /
8 Page |
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it Online |
Download Datasheet
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CREE POWER
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Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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File Size |
273.34K /
17 Page |
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it Online |
Download Datasheet
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Price and Availability
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