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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
GT50J341
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| Description |
IGBT, 600 V, 50 A, Built-in Diodes, TO-3P(N)
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| Tech specs |
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Official Product Page
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TOSHIBA
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| Part No. |
GT50J301
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| Description |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
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| File Size |
265.98K /
6 Page |
View
it Online |
Download Datasheet
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TOSHIBA
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| Part No. |
GT50J322
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| Description |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
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| File Size |
260.03K /
6 Page |
View
it Online |
Download Datasheet
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
GT50J325
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| Description |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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| File Size |
168.29K /
7 Page |
View
it Online |
Download Datasheet
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