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STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
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| Part No. |
24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST24C16B1TR ST24C16B3TR ST24C16B5TR ST24C16B6TR ST24C16M1TR ST24C16M3TR ST24C16M5TR ST24C16M6TR ST24W16 ST24W16B1TR ST24W16B3TR ST24W16B5TR ST24W16B6TR ST24W16M1TR ST24W16M3TR ST24W16M5TR ST24W16M6TR ST25W16 ST25W16B1TR ST25W16B3TR ST25W16B5TR ST25W16B6TR ST25W16M1TR ST25W16M3TR ST25W16M5TR ST25W16M6TR
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| Description |
MOSFET; Transistor Polarity:dual P channel; Drain Source Voltage, Vds:-30V; Continuous Drain current, Id:-6.4A; Package/Case:powerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, dual NN poweRPAKMOSFET, dual NN poweRPAK; Transistor type:MOSFET; Transistor polarity:dual N; Voltage, Vds max:100V; Case style:powerPak SO-8; current, Id cont:1.8A; current, Idm pulse:10A; power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P channel; Drain Source Voltage, Vds:-20V; Continuous Drain current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, dual, PP, poweRPAK; Transistor type:MOSFET; current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 powerPak; Charge, gate p channel:49nC; current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM
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| File Size |
125.39K /
17 Page |
 View
it Online |
Download Datasheet
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Netpower Technologies, Inc.
Allegro MicroSystems, Inc.
AllegroMicroSystems
ALLEGRO[Allegro MicroSystems]
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| Part No. |
ULN2004L ULQ2004L 2003 ULN2023A ULN2023L ULN2024A ULN2024L ULQ2024L ULN2003L ULN2003A ULN2004A ULQ2003A ULQ2004A ULQ2003L ULQ2024A ULQ2023A ULN2001 ULN2006A ULN2006L ULN2008A ULN2003 ULN2018A ULN2018L ULN2017A ULQ2023L ULN2024 ULN2023 ULQ2003
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| Description |
high-VOLTAGE, high-current DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Low-density access line, ARM-based 32-bit MCU with 16 or 32 KB Flash, 5 timers, ADC and 4 communication interfaces 高电压，大电流达林顿阵列
Low-density performance line, ARM-based 32-bit MCU with 16 or 32 KB Flash, USB, CAN, 6 timers, 2 ADCs, 6 communication interfaces
Medium-density access line, ARM-based 32-bit MCU with 64 or 128 KB Flash, 6 timers, ADC and 7 communication interfaces
high-VOLTAGE/high-currentDARLINGTONARRAYS
high-VOLTAGE/ high-current DARLINGTON ARRAYS
high-VOLTAGE high-current DARLINGTON ARRAYS
7-channel high-current Darlington Array
high-Voltage, high-current Darlington Arrays(杈???靛?95V锛??浜???靛钩?昏??佃矾??????澶?????璐?浇?寸??ュ???????澶х?娴?揪??】?靛?)
high-VOLTAGE, high-current DARLINGTON ARRAYS
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| File Size |
174.06K /
10 Page |
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Price and Availability
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