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Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
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| Part No. |
RM600DY-66S
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| OCR Text |
...SWITCHING USE INSULATED TYPE
hvdi (High Voltage Diode) Module
RM600DY-66S
q IDC ............................................................... 600A q VRRM .................................................... 3300V q Insulated type... |
| Description |
HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE
HIGH POWER/ HIGH SPEED SWITCHING USE INSULATED TYPE
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| File Size |
39.42K /
2 Page |
 View
it Online |
Download Datasheet
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
RM400DY-66S
|
| OCR Text |
...SWITCHING USE INSULATED TYPE
hvdi (High Voltage Diode) Module
RM400DY-66S
q IDC .............................................................. 400A q VRRM .................................................... 3300V q Insulated type ... |
| Description |
HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE
|
| File Size |
39.15K /
2 Page |
View
it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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| Part No. |
RM600DY-66S
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| OCR Text |
...lated type 2-element in a pack hvdi (high voltage diode) module (c) (c) (e) (e) k2 circuit diagram a2 k1 a1 label 4-m8 nuts c ee c g e c k1 k2 a1 a2 57 0.25 57 0.25 20 124 0.25 140 130 114 5 38 18 61.5 15 30 40 6- 7 mounting hole... |
| Description |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
| File Size |
32.02K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
|
| Part No. |
RM400DY-66S
|
| OCR Text |
...ated type 2-elements in a pack hvdi (high voltage diode) module (c) (c) (e) (e) k2 circuit diagram a2 k1 a1 label 4-m8 nuts c ee c g e c k1 k2 a1 a2 57 0.25 57 0.25 20 124 0.25 140 130 114 5 38 18 61.5 15 30 40 6- 7 mounting hole... |
| Description |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
| File Size |
32.15K /
3 Page |
View
it Online |
Download Datasheet |
|
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