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Philips
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Part No. |
irfz24n_1 irfz24n
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OCR Text |
...pose switching applications.
irfz24n
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 5... |
Description |
N-channel enhancement mode TrenchMOS(tm) transistor From old datasheet system
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File Size |
48.83K /
8 Page |
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it Online |
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International Rectifier, Corp. IRF[International Rectifier]
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Part No. |
IRFZ24L irfz24nS irfz24nSTRR irfz24nSTRL irfz24nL IRZ24NS
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OCR Text |
...th 280s; duty cycle 2%. Uses irfz24n data and test conditions
ISD 10A, di/dt 280A/s, VDD V(BR)DSS,
TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to ap... |
Description |
(159.21 k) 59.21十一 Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A) 功率MOSFET(减振钢板基本\u003d 55V的,的Rds(on)\u003d 0.07ohm,身份证\u003d 17A条) 55V,17A,N-Channel HEXFET Power MOSFET(55V,17A,N沟道 HEXFET功率MOS场效应管) 55V的,17A条,N沟道HEXFET功率MOSFET5V的,17A条,沟道的HEXFET功率马鞍山场效应管) 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
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File Size |
155.28K /
10 Page |
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it Online |
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For
irfz24n Found Datasheets File :: 19 Search Time::1.422ms Page :: | <1> | 2 | |
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