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    IXBH42N170

IXYS Corporation
Part No. ixbh42n170
OCR Text High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 42N170 IXBT 42N170 VCES = 1700 V = 75 A IC25 VCE(sat) = 3.6 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg Test Con...
Description High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
File Size 577.60K  /  5 Page

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