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latency Datasheet PDF File

For latency Found Datasheets File :: 12228 Search Time::1.609ms
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				ELPIDA[Elpida Memory]
Part No.	EDS2504APTA EDS2504APTA-75TI EDS2504APTA-7ATI EDS2504APTA-TI EDS2508APTA-75TI EDS2508APTA-7ATI EDS2508APTA-TI EDS2516APTA-75TI EDS2516APTA-7ATI EDS2516APTA-TI
OCR Text	...1, 2, 4, 8) * Programmable /CAS latency (CL): 2, 3 * Byte control by DQM : DQM (EDS2504/08AP) : UDQM, LDQM (EDS2516AP) * Refresh cycles: 8192 refresh cycles/64ms * 2 variations of refresh Auto refresh Self refresh * Ambient temperature ra...
Description	256M bits SDRAM WTR (Wide Temperature Range)
File Size	529.59K / 51 Page	View it Online	Download Datasheet

				ELPIDA[Elpida Memory]
Part No.	EDS2508APSA EDS2508APSA-75 EDS2508APSA-75L EDS2508APSA-7A EDS2508APSA-7AL EDS2516APSA EDS2516APSA-75 EDS2516APSA-75L EDS2516APSA-7A EDS2516APSA-7AL
OCR Text	...1, 2, 4, 8) * Programmable /CAS latency (CL): 2, 3 * Byte control by DQM : DQM (EDS2508AP) : UDQM, LDQM (EDS2516AP) * Refresh cycles: 8192 refresh cycles/64ms * 2 variations of refresh Auto refresh Self refresh C D DQ13 VDDQ (DQ6)* ...
Description	256M bits SDRAM
File Size	539.53K / 51 Page	View it Online	Download Datasheet

				Qimonda AG
Part No.	HYS72T64001HP
OCR Text	...ns column address strobe (cas) latency = 4, row column delay (rcd) latency = 4 and row precharge (rp) latency = 4 using the latest jedec spd revision 1.2 and produced on the raw card ?g? description sdram technology pc2-5300 hys72t32000h...
Description	240-Pin Registered DDR2 SDRAM Modules
File Size	1,025.25K / 53 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. http://
Part No.	K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/LB3 K4H560438E-GC/LA2 K4H560438E-GC/LB0 K4H560438E-GC/LB3 K4H560438E-GLB0 K4H560438E-GLB3 K4H560438E-GCB3 K4H560438E-GCA2 K4H560838E-GCA2 K4H560438E-GCB0 K4H560838E-GCB0 K4H560838E-GLB0 K4H560838E-GLB3 K4H560838E-GLA2
OCR Text	...th address key programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM are sampled at the positive going edge of the system clock(CK) * Data I/O transactions on...
Description	DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8) 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
File Size	245.98K / 24 Page	View it Online	Download Datasheet

				Analog Devices, Inc.
Part No.	AD9430/PCB-CMOS AD9430BSV-170 AD9430
OCR Text	... - tCPD) Interleaved Mode (A, B latency) Parallel Mode (A, B latency) OUTPUT Parameters in LVDS Mode Valid Time (tV) Propagation Delay (tPD) Rise Time (tR) (20% to 80%) Fall Time (tF) (20% to 80%) DCO Propagation Delay (tCPD) Data to DCO Sk...
Description	ER 7C 7#16 SKT PLUG RTANG 12-Bit/ 170 MSPS 3.3V A/D Converter 12-Bit, 170 MSPS 3.3V A/D Converter
File Size	1,585.14K / 20 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/LAA K4H560838E-TC/LB3 K4H560438E-TC/LB3 K4H560438E-TC/LB0 K4H560438E-TC/LA2 K4H560438E-TC/LAA K4H560838E K4H560438E-TLAA K4H560838E-TCAA K4H560838E-TLAA K4H560438E-TCAA K4H560438E-TCB3 K4H560438E-TLB3
OCR Text	...th address key programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM are sampled at the positive going edge of the system clock(CK) * Data I/O transactions on...
Description	DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
File Size	216.51K / 24 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	UPD488448FB-C71-45-DQ1 UPD488448FB-C60-53-DQ1 UPD488448FB-C60-53-DQ2 UPD488448FF-C80-45-DQ2 UPD488448FF-C80-45-DQ1 UPD488448FB-C80-45-DQ1 UPD488448FB-C80-45-DQ2 UPD488448FB-C71-45-DQ2
OCR Text	...on where high bandwidth and low latency are required. The PD488448 is 128M-bit Direct Rambus DRAM (RDRAM(R)), organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600 MHz to 800 MHz transfer rates whi...
Description	128 M-bit Direct Rambus??DRAM 128 M-bit Direct RambusDRAM 128 M-bit Direct Rambus?/a> DRAM 128 M-bit Direct Rambus DRAM
File Size	1,909.62K / 80 Page	View it Online	Download Datasheet

				Elpida Memory
Part No.	EDS1216AABH EDS1216CABH
OCR Text	...1, 2, 4, 8) * Programmable /CAS latency (CL): 2, 3 * Byte control by UDQM and LDQM * Refresh cycles: 4096 refresh cycles/64ms * 2 variations of refresh Auto refresh Self refresh * FBGA package with lead free solder (Sn-Ag-Cu) C DQ12 D...
Description	(EDS1216AABH / EDS1216CABH) 128M bits SDRAM (8M words x 16 bits)
File Size	1,128.47K / 49 Page	View it Online	Download Datasheet

				MICRON[Micron Technology]
Part No.	MT48LC1M16A1S MT48LC1M16A1TGS
OCR Text	....3V power supply * Supports CAS latency of 1, 2 and 3 MT48LC1M16A1 S - 512K x 16 x 2 banks For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/sdramds.html PIN ASSIGNMENT (Top View) 50-Pin TS...
Description	SYNCHRONOUS DRAM
File Size	1,452.05K / 51 Page	View it Online	Download Datasheet

				MICRON[Micron Technology]
Part No.	MT48LC1M16A1 MT48LC1M16A1TGSIT
OCR Text	....3V power supply * Supports CAS latency of 1, 2 and 3 * Industrial temperature range: -40C to +85C MT48LC1M16A1 SIT - 512K x 16 x 2 banks INDUSTRIAL TEMPERATURE For the latest data sheet, please refer to the Micron Web site: www.microns...
Description	SYNCHRONOUS DRAM
File Size	1,451.81K / 51 Page	View it Online	Download Datasheet

For latency Found Datasheets File :: 12228 Search Time::1.609ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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