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MOTOROLA[Motorola, Inc]
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| Part No. |
mrfg35003mt1
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| OCR Text |
mrfg35003mt1/D
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class... |
| Description |
mrfg35003mt1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
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| File Size |
331.39K /
8 Page |
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it Online |
Download Datasheet
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Motorola, Inc.
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| Part No. |
mrfg35003mt1
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| OCR Text |
mrfg35003mt1 motorola rf device data the rf gaas line rf power field effect transistor designed fo r wll/mmds/bwa or umts driver applications with frequencies from 1.8 to 3.6 ghz. device is unmatched and is suitable for use in class ... |
| Description |
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
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| File Size |
332.98K /
8 Page |
View
it Online |
Download Datasheet |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
mrfg35003mt1
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| OCR Text |
mrfg35003mt1 bwa 1 rf reference design data freescale semiconductor rf reference design library gallium arsenide phemt rf power field effect transistors device characteristics (from device data sheet) designed for wll/mmds/bwa or umts dri... |
| Description |
RF Reference Design Library Gallium Arsenide PHEMT
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| File Size |
96.67K /
5 Page |
View
it Online |
Download Datasheet |
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