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  n-channel-depletion Datasheet PDF File

For n-channel-depletion Found Datasheets File :: 423    Search Time::1.953ms    
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    BSS149 Q67000-S252

SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BSS149 Q67000-S252
OCR Text N channel Depletion mode High dynamic resistance Available grouped in VGS(th) 1 2 3 Type Ordering Code Tape and Reel Information E6325: 2000 pcs/carton; Ammopack Pin Configuration Marking Package 1 G 2 D 3 S SS149 TO-92...
Description SIPMOS ? Small-Signal Transistor
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

File Size 278.04K  /  6 Page

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    MM5450BN MM5450BV MM5451BN MM5451BV

MICREL[Micrel Semiconductor]
Part No. MM5450BN MM5450BV MM5451BN MM5451BV
OCR Text ...ithic MOS IC's fabricated in an N-Channel, metal-gate process. The technology produces low-threshold, enhancement-mode, and ion-implanted depletion-mode devices. A single pin controls the LED display brightness by setting a reference curren...
Description LED Display Driver

File Size 79.96K  /  8 Page

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    MRF9811T1

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF9811T1
OCR Text ...REQUENCY GaAs FET TRANSISTOR N-Channel Depletion-Mode MESFET Designed for use in driver stages of moderate power RF amplifiers to 2 GHz. Typical applications are cellular radios and personal communication transmitters such as AMPS, ETAC...
Description HIGH FREQUENCY GaAs FET TRANSISTOR

File Size 48.02K  /  4 Page

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    ASI10832 BFW13 ASIBFW13

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. ASI10832 BFW13 ASIBFW13
OCR Text N-CHANNEL SILICON FET DEPLETION MODE DESCRIPTION: The ASI BFW13 is Designed for Low Noise Video Amplifier Applications. MAXIMUM RATINGS ID IG VDS VDG VGS Ptot TJ TSTG JA O O PACKAGE STYLE TO- 72 10 mA 5.0 mA 30 V 30 V 30 V 150...
Description N-CHANNEL SILICON FET DEPLETION MODE
Transistor

File Size 14.42K  /  1 Page

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    SI9121

Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Part No. SI9121
OCR Text ...Amplifier D On-Chip 70-V, 1.5-W N-Channel MOSFET Switch D Integrated High Voltage Start-Up Circuit, with VCC Regulator D D D D D -10-V to -60-V Input Voltage Range 95-kHz PWM Operation Integrated Soft-Start and Oscillator High Efficiency Ov...
Description High-Voltage Non-Isolated Buck-Boost Converter for ISDN Digital Phones
High-Voltage, Non-Isolated Buck-Boost Converter for ISDN Digital Phones

File Size 67.83K  /  8 Page

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    NVM3060

ETC[ETC]
Part No. NVM3060
OCR Text NVM 3060 4096-Bit EEPROM Edition Feb. 14, 1990 6251-309-2/E ITT Semiconductors NVM 3060 Contents Page 3 4 4 4 4 5 5 5 5 7 8 8 8 8 ...channel floating-gate technology with a capacity of 512 words, 8 bits each. The NVM 3060 is intended...
Description 4096-Bit EEPROM

File Size 157.45K  /  13 Page

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    HGTH20N40C1D HGTH20N40E1D HGTH20N50C1D HGTH20N50E1D

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HGTH20N40C1D HGTH20N40E1D HGTH20N50C1D HGTH20N50E1D
OCR Text N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package JEDEC TO-218AC COLLECTOR (FLANGE) EMITTER COLLECTOR GATE Features * 20A, 400V and 500V * VCE(ON) 2.5V Max. * TFALL 1s, 0.5s * Low On-State Voltage * Fast Switching Speeds * ...
Description CAP 0.056UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 20 A, 400 V, N-CHANNEL IGBT, TO-218AC
20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

File Size 35.49K  /  6 Page

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    HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D
OCR Text N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features * 10A, 400V and 500V * VCE(ON): 2.5V Max. * TFALL: 1s, 0.5s * Low On-State Voltage * Fast Switching Speeds ...
Description 10A 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 17.5 A, 400 V, N-CHANNEL IGBT, TO-220AB

File Size 36.64K  /  6 Page

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    STP38N06 3645

STMICROELECTRONICS[STMicroelectronics]
Part No. STP38N06 3645
OCR Text N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P38N06 s s s s s s s s V DSS 60 V R DS(on) < 0.03 ID 38 A (*) TYPICAL RDS(on) = 0.026 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE...
Description N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR

File Size 132.70K  /  11 Page

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For n-channel-depletion Found Datasheets File :: 423    Search Time::1.953ms    
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