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DS182107 227M0 S25A3100 TE0107A A3120 1N4942 PGE60803 SD4011
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  N45 Datasheet PDF File

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    THN450Z

AUK corp
Part No. THN450Z
Description SiGe NPN Transistor

File Size 175.05K  /  5 Page

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    Hi-Sincerity Mocroelectronics Corp.
HSMC[Hi-Sincerity Mocroelectronics]
Part No. H01N45A
Description N-channel High Voltage MOSFET
N-Channel Power Field Effect Transistor

File Size 42.87K  /  4 Page

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    New Jersey Semi-Conductor Products, Inc.
Part No. 1N4549A
Description Ref/Red Diodes, 10W < P(D)

File Size 93.24K  /  1 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFN450
Description POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.415ohm, Id=12A) 功率MOSFET N沟道BVdss \u003d 500V及的Rds(on)\u003d 0.415ohm,身份证\u003d 12A条)

File Size 175.61K  /  6 Page

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    EN4514B EN4514

ON Semiconductor
Sanyo Semicon Device
Part No. EN4514B EN4514
Description PIN Diode, 50V, 50mA, rs=2.5 Ohm(typ), Dual CP
PIN Diode for VHF, UHF, AGC Applications

File Size 351.18K  /  6 Page

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    EN4511D EN4511

ON Semiconductor
Sanyo Semicon Device
Part No. EN4511D EN4511
Description PIN Diode, 50V, 50mA, rs=2.5 Ohm(typ), Dual MCP
Pin Diode for VHF, UHF, AGC Applications

File Size 360.65K  /  6 Page

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    EN4510E EN4510

ON Semiconductor
Sanyo Semicon Device
Part No. EN4510E EN4510
Description PIN Diode, 50V, 50mA, rs=2.5 Ohm(typ), Single MCP
Pin Diode for VHF, UHF, AGC Applications

File Size 407.13K  /  6 Page

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    STN4546

Stanson Technology
Part No. STN4546
Description STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 357.77K  /  6 Page

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    STN4526

Stanson Technology
Part No. STN4526
Description STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 606.40K  /  6 Page

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    ALN4500

Advanced Semiconductor Business Inc.
Part No. ALN4500
Description Internally Matched LNA Module

File Size 161.61K  /  4 Page

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