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Omron Electronics
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Part No. |
3S4YR-MPW
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OCR Text |
...ured for front or rear ejection Non-ISO standard encoding
Ordering Information
Magnetic Tracks Supported (R, R/W) 1 2 3 Center JIS II --...Punch Function Yes Cover Cable Color No No No No Part Number Black 3S4YR-MPW9 Black 3S4YR-MPW9B
F... |
Description |
Motor Driven Pre-Paid Card Reader/Write
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File Size |
707.25K /
4 Page |
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it Online |
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DYNEX[Dynex Semiconductor]
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Part No. |
GP1601FSS18
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OCR Text |
...URES
s s s s s
Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1600A Per module
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 2.6V 1600A 3200A
External conn... |
Description |
Single Switch Low VCE(SAT) IGBT Module
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File Size |
123.85K /
9 Page |
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it Online |
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DYNEX[Dynex Semiconductor]
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Part No. |
GP200MHS12
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OCR Text |
...mber 2000
FEATURES
s s s
Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1200V 2.7V 200A 400A
APPLICATIONS
s s s s
High Po... |
Description |
Half Bridge IGBT Module
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File Size |
98.36K /
10 Page |
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it Online |
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DYNEX[Dynex Semiconductor]
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Part No. |
GP200MHS18
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OCR Text |
Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 3.5V 200A 400A
APPLICATIONS
s s s s
High Power Inverters Motor... |
Description |
Half Bridge IGBT Module
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File Size |
135.14K /
10 Page |
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it Online |
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Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
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Part No. |
GP200MKS12
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OCR Text |
...gured With Upper Arm Controlled Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1200V 2.7V 200A 400A
APPLICATIONS
s s s s s
High ... |
Description |
IGBT Chopper Module Preliminary Information 200 A, 1200 V, N-CHANNEL IGBT
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File Size |
126.08K /
10 Page |
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it Online |
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DYNEX[Dynex Semiconductor]
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Part No. |
GP200MLS12
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OCR Text |
...gured With Lower Arm Controlled Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1200V 2.7V 200A 400A
APPLICATIONS
s s s s s
High ... |
Description |
IGBT Chopper Module Preliminary Information
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File Size |
126.55K /
10 Page |
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it Online |
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DYNEX[Dynex Semiconductor]
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Part No. |
GP201MHS18
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OCR Text |
Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 2.6V 200A 400A
APPLICATIONS
s s s s
11(C2) 1(E1C2) 2(E2)
6(... |
Description |
Low VCE(SAT) Half Bridge IGBT Module
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File Size |
128.70K /
10 Page |
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it Online |
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DYNEX[Dynex Semiconductor]
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Part No. |
GP2400ESM12
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OCR Text |
...
n - Channel Enhancement Mode Non Punch Through Silicon High Gate Input Impedance Optimised For High Power High Frequency Operation 1200V Rating 2400A Per Module
s Isolated MMC Base with AlN
s s
G Aux E E1 E2 External connection E3
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Description |
Powerline N-Channel Single Switch IGBT Module Preliminary Information
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File Size |
169.18K /
12 Page |
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it Online |
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DYNEX[Dynex Semiconductor]
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Part No. |
GP2400ESM18
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OCR Text |
...High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates 2400A Per Module
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 3.5V 2400A 4800A
APPLICATIONS
s s s s
External conn... |
Description |
Hi-Reliability Single Switch IGBT Module
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File Size |
155.57K /
10 Page |
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it Online |
Download Datasheet |
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Price and Availability
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