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12TTS08 2N6153 CN6116B 1N4937L AS2521B AS2521B BAV20WS CQV1104
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  poly Datasheet PDF File

For poly Found Datasheets File :: 1164    Search Time::1.828ms    
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    IMP[IMP, Inc]
Part No. C1004
OCR Text ...roachment Punch Through Voltage poly Field Threshold Symbol VTN N N LeffN WN BVDSSN VTFP(N) Minimum 0.55 74 0.60 7 10 Typical 0.75 0.60 87 0.75 0.8 T=25oC Unless otherwise noted Maximum Unit Comments 0.95 V 100x1.0m V1/2 100x1.0m 100 A/V...
Description Process C1004

File Size 30.83K  /  2 Page

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    IMP Inc
IMP[IMP, Inc]
IMP Inc
Part No. C1210
OCR Text ...roachment Punch Through Voltage poly Field Threshold Voltage Zero Vt N-Channel Transis. Threshold Voltage Body Factor Conduction Factor Saturation Current Symbol VTN N N LeffN WN BVDSSN VTFP(N) Symbol VTZLN ZLN ZLN IDSATZN Minimum 0.55 64 0...
Description Process C1210 CMOS 1.2mm Zero Threshold Devices

File Size 33.75K  /  4 Page

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    IMP[IMP, Inc]
Part No. C1226
OCR Text poly Electrical Characteristics T = 25oC Unless otherwise noted Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor Thre...
Description CMOS 1.2um 100V CMOS, Double Metal - Double poly

File Size 39.21K  /  2 Page

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    IMP[IMP, Inc]
IMP Inc
Part No. C1227
OCR Text poly Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSP Punch Through Voltage ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor Threshold Voltage VTN Body Factor N Con...
Description ECONOLINE: RSS & RSD - 1kVDC and 3KVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 85%- SMD5, SMD8, SMD10 and SMD12 case styles 30V的高压BiCMOS工艺1.2毫米双金双聚
From old datasheet system
HV BiCMOS 1.2mm 30V Double Metal - Double poly

File Size 26.81K  /  2 Page

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    IMP[IMP, Inc]
Part No. C3015
OCR Text ...roachment Punch Through Voltage poly Field Threshold Voltage Symbol VTN N N LeffN WN BVDSSN VTFP(N) Minimum 0.6 42 2.85 12 12 Typical 0.8 0.6 47 3.2 0.7 Maximum 1.0 52 3.55 Unit V V1/2 A/V2 m m V V Comments 100x3m 100x3m 100x100m 100x3m Per...
Description CMOS 3um Digital

File Size 31.91K  /  2 Page

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    IMP[IMP, Inc]
Part No. C3017
OCR Text ...roachment Punch Through Voltage poly Field Threshold Voltage Symbol VTN N N LeffN WN BVDSSN VTFP(N) Minimum 0.6 42 2.85 12 12 Typical 0.8 0.6 47 3.2 0.7 Maximum 1.0 52 3.55 Unit V V1/2 A/V2 m m V V Comments 100x4m 100x4m 100x100m 100x4m Per...
Description 10 Volt Analog Mixed Mode

File Size 29.16K  /  2 Page

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    DS1208

List of Unclassifed Manufacturers
ETC[ETC]
MAXIM - Dallas Semiconductor
Part No. DS1208
OCR Text poly, Single Metal (Ti/TiN layers Al / 0.5% Cu / 0.8% Si 0.6 m DS1208 Standard Process Gate Ox Thickness: Cf: Ea: : 60% 0.7 1 160 A Passivation: 55 5.5 C Volts TEOS Oxide - Nitride Summary Data with Chi-Square Distribu...
Description dallas semiconductor reliability report

File Size 18.26K  /  5 Page

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    E-OEC[Opto Electronics Co,. LTD]
Part No. FM-9056LM-5AN FM-9032LM-5AN FM-9036LM-5AN FM-9038LM-5AN FM-9040LM-5AN
OCR Text ...mold Type Device Packing Method poly Bag Units / Tube 200 poly Bag/ Inner Box Partial Max Devices / Max Inner Box / Shipment of Inner Box Outer Box Outer Box 5 1000 10 * Inner Box # 1 * Inner Box # 1 * Outer Box # 2 * Outer Box # 3 (unit...
Description IR Receiver Modules for Remote Control Systems

File Size 834.42K  /  7 Page

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For poly Found Datasheets File :: 1164    Search Time::1.828ms    
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