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ST Microelectronics
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| Part No. |
STGB10NC60KD STGF10NC60KD
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| OCR Text |
powermesh? igbt table 1: general features lower on-voltage drop (v cesat ) off losses include tail current lower c res / c ies ratio switching losses include diode recovery energy very soft ultra fast recovery antiparallel diode ... |
| Description |
(STGx10NC60KD) N-CHANNEL powermesh IGBT
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| File Size |
360.31K /
14 Page |
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ST Microelectronics
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| Part No. |
P4NK60ZFP
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| OCR Text |
...s well established strip- based powermesh? layout. in addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. such series comple- ments st ful... |
| Description |
Search To STP4NK60ZFP
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| File Size |
646.89K /
16 Page |
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意法半导
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| Part No. |
STGW40N120KD
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| OCR Text |
...his igbt utilizes th e advanced powermesh? process resulting in an excellent trade-off between switching performance and low on-state behavior. figure 1. internal schematic diagram to-247 1 2 3 table 1. device summary order code marking ... |
| Description |
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| File Size |
338.39K /
10 Page |
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ST Microelectronics
意法半导
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| Part No. |
STU10NB80
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| OCR Text |
powermesh ? mosfet preliminary data n typical r ds(on) = 0.65 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description ... |
| Description |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL 800V - 0.65ohm - 10A - Max220 powermeshO MOSFET
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| File Size |
44.27K /
5 Page |
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ST Microelectronics
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| Part No. |
STW9N150
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| OCR Text |
...- 8a - to-247 very high voltage powermesh? power mosfet general features 100% avalanche tested avalanche ruggedness gate charge minimized very low intrinsic capacitances high speed switching very low on-resistance description using th... |
| Description |
N-channel MOSFET
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| File Size |
168.85K /
9 Page |
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it Online |
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Price and Availability
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