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ST Microelectronics
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| Part No. |
STB80N20M5 STP80N20M5
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| OCR Text |
...stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is un...a stp80n20m5 61 a 1 2 3 to-220 d 2 pak 1 3 ... |
| Description |
D2PaK MDmesh V Power MOSFET
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| File Size |
944.11K /
14 Page |
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ST Microelectronics
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| Part No. |
STL42N65M5
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| OCR Text |
... with the well known company?s powermesh? horizontal layout. the resulting product has an extremely low on- resistance, unmatched among s...a (1) 1. the value is rated according to r thj-case ... |
| Description |
34 a MDmesh V Power MOSFET
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| File Size |
668.45K /
11 Page |
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ST Microelectronics
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| Part No. |
STF13N95K3
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| OCR Text |
...s well-established strip-based powermesh? layout with a new optimized vertical structure. the innovative design offer significantly reduced on- resistance, exceptional dynamic performance and very large avalanche capab ility, making the... |
| Description |
Power MOSFETs
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| File Size |
550.44K /
12 Page |
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意法半导
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| Part No. |
STGW38IH130D
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| OCR Text |
...his igbt utilizes th e advanced powermesh? process resulting in an excellent trade-off between switching performance and low on-state beh...a i c (1) continuous collector current at t c = 100 c 33 25 a i cl (2) 2. vclamp = 960 v, t j =1... |
| Description |
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| File Size |
672.95K /
14 Page |
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ST Microelectronics
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| Part No. |
P3NB60FP
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| OCR Text |
powermesh ? mosfet n typical r ds(on) = 3.3 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitanc...a i d drain current (continuous) at t c = 100 o c 2.1 1.4 a i dm ( ) drain current (pulsed) 13.2 ... |
| Description |
STP3NB60
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| File Size |
265.80K /
9 Page |
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ST Microelectronics
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| Part No. |
P3NB80 P3NB80FP
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| OCR Text |
powermesh ? mosfet n typical r ds(on) = 4.6 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitanc...a i d drain current (continuous) at t c = 100 o c 1.6 1.6 ( ) a i dm ( ) drain current (pulsed) 1... |
| Description |
Search --To STP3NB80FP
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| File Size |
275.36K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
P3NB90FP
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| OCR Text |
powermesh ? mosfet n typical r ds (on) = 4 w n extremely high dv/dt capability n 100% avalanche tested n gate charge minimized n very low in...a 3.5 a 110 w 35 w sales type marking package packaging stp3nb90 p3nb90 to-220 tube stp3nb90fp p3nb9... |
| Description |
Search --To STP3NB90FP
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| File Size |
155.65K /
10 Page |
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it Online |
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Price and Availability
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