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    PTFA220081M

Infineon Technologies AG
Part No. PTFA220081M
Description High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz

File Size 1,068.89K  /  16 Page

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HUA FENG CIRCUIT





    Infineon Technologies A...
Part No. PTFA211801E PTFA211801E-15
Description Thermally-Enhanced High Power RF LDMOS FET

File Size 479.09K  /  8 Page

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    PTFA043002E

Infineon Technologies AG
Part No. PTFA043002E
Description Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 鈥?860 MHz

File Size 296.92K  /  10 Page

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    PTFA261702E

Infineon Technologies AG
Part No. PTFA261702E
Description Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 - 2700 MHz

File Size 362.38K  /  10 Page

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    PTFA220041M

Infineon Technologies AG
Part No. PTFA220041M
Description High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz

File Size 1,158.78K  /  18 Page

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    PTFA210301E

Infineon Technologies AG
Part No. PTFA210301E
Description Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz

File Size 190.69K  /  9 Page

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    PTFA212002E

Infineon Technologies AG
Part No. PTFA212002E
Description Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz

File Size 219.69K  /  10 Page

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    PTFA220121M

Infineon Technologies AG
Part No. PTFA220121M
Description High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz

File Size 245.21K  /  19 Page

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    PTFA240451E

Infineon Technologies AG
Part No. PTFA240451E
Description Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420-2480 MHz

File Size 189.16K  /  10 Page

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    Infineon Technologies A...
Part No. PTFC270101M PTFC270101M-15
Description High Power RF LDMOS Field Effect Transistor

File Size 403.48K  /  21 Page

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Part: PTF043002E
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Stock: 121
Unit price for :
    50: $76.80
  100: $72.96
1000: $69.12

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