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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
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| Part No. |
BUP200D Q67040-A4420-A2 BUP200-D
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| OCR Text |
...TC = 25 C
Power dissipation
ptot
50
W -55 ... + 150 -55 ... + 150 C
TC = 25 C
Chip or operating temperature Storage temperature
Tj Tstg
Semiconductor Group
1
Dec-06-1995
BUP 200 D
Maximum Ratings Parameter DIN ... |
| Description |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free) 3.6 A, 1200 V, N-CHANNEL IGBT, TO-220AB
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-SOIC -55 to 125 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流闭锁免费
From old datasheet system
IGBT Duopack (IGBT with Antiparallel ...
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| File Size |
325.22K /
8 Page |
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it Online |
Download Datasheet
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Para Light Electronics
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| Part No. |
L-51ROPT1D1
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| OCR Text |
...m case vcc vout lo ti tstg totr ptot tsd 3~5 3~5 2.5 100 -25 to 85 -25 to 85 50 260 v v ma oc oc oc mw oc electro-optical characteristics:(ta=25 o c) supply current max. input current max. voltage gain frequency range low level output volta... |
| Description |
Receiver Module
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| File Size |
1,159.51K /
14 Page |
View
it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
TDA7564
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| OCR Text |
... ) 0 10 20 30 40 50 60 70 80 90 ptot (w) 0 10 20 30 40 50 60 70 80 90 n (%) ptot standard mode vs = 14.4 v rl = 4 x 4 ohm f = 1 khz sine n 0.1 1 10 po ( w ) 0 10 20 30 40 50 60 70 80 90 ptot (w) 0 10 20 30 40 50 60 70 80 90 n (%) n ptot hi... |
| Description |
MULTIFUNCTION QUAD POWER AMPLIFIER WITH BUILT-IN DIAGNOSTICS FEATURES
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| File Size |
250.96K /
20 Page |
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it Online |
Download Datasheet |
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Infineon
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| Part No. |
CGY196
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| OCR Text |
...A dBm
VD ID PIN_max TCh Tstg ptot PPulse
C C
W W
Data Sheet
1
2001-01-01
GaAs Components
CGY 196 Thermal Resistance Parameter Channel-soldering point Symbol Value 70 Unit K/W
RthChS
VD1
VD2
RF IN / VG
RF ... |
| Description |
Multiband Power Amplifier (DECT, PHS)
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| File Size |
290.03K /
24 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPN03N60S5
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| OCR Text |
....4
Unit A
ID puls VGS VGS ptot Tj , Tstg
3 20 30 1.8 -55... +150 W C V
Operating and storage temperature
Rev. 2.1
Page 1
2004-03-30
SPN03N60S5
Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, ID =... |
| Description |
Cool MOSPower Transistor 酷马鞍山⑩功率晶体管
for lowest Conduction Losses
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor
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| File Size |
224.83K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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