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For rad Found Datasheets File :: 3549 Search Time::0.985ms
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				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	HCTS373D HCTS373DMSR HCTS373HMSR HCTS373K HCTS373KMSR HCTS373MS FN2131
OCR Text	...ened CMOS SOS * Total Dose 200K rad (Si) * SEP Effective LET No Upsets: >100 MEV-cm2/mg * Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ) * Dose Rate Survivability: >1 x 1012 rad (Si)/s * Dose Rate Upset >1010 rad (Si)/s 20...
Description	radiation Hardened Octal Transparent Latch, Three-State HCT SERIES, 8-BIT DRIVER, TRUE OUTPUT, CDIP20 From old datasheet system radiation Hardened Octal Transparent Latch/ Three-State
File Size	276.80K / 11 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HCTS374D HCTS374DMSR HCTS374HMSR HCTS374K HCTS374KMSR HCTS374MS FN2134 HCTS373KTR
OCR Text	...ened SOS CMOS * Total Dose 200K rad (Si) * SEP Effective LET No Upsets: >100 MEV-cm2/mg * Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ) * Dose Rate Survivability: >1 x 1012 rad (Si)/s * Dose Rate Upset >1010 rad (Si)/s 20...
Description	From old datasheet system radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered radiation Hardened Octal Transparent Latch/ Three-State
File Size	182.71K / 11 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HCTS75D HCTS75DMSR HCTS75HMSR HCTS75K HCTS75KMSR HCTS75MS FN3189
OCR Text	...ened SOS CMOS * Total Dose 200K rad (Si) * SEP Effective LET No Upsets: >100 MEV-cm2/mg * Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) * Dose Rate Survivability: >1 x 1012 rad (Si)/s * Dose Rate Upset >1010 rad (Si)/s 2...
Description	From old datasheet system radiation Hardened Dual 2-Bit Bistable Transparent Latch
File Size	136.44K / 9 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation]
Part No.	HCTS85D HCTS85DMSR HCTS85HMSR HCTS85K HCTS85KMSR HCTS85MS FN3059
OCR Text	...rdened SOS CMOS Total Dose 200K rad (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) Dose Rate Survivability: >1 x 1012 rad (Si)/s Dose Rate Upset >1010 rad (Si)/s 20ns Pul...
Description	radiation Hardened 4-Bit Magnitude Comparator From old datasheet system
File Size	213.52K / 10 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HCTS86D HCTS86DMSR HCTS86HMSR HCTS86K HCTS86KMSR HCTS86MS FN2249
OCR Text	...ened SOS CMOS * Total Dose 200K rad (Si) * SEP Effective LET No Upsets: >100 MEV-cm2/mg * Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) * Dose Rate Survivability: >1 x * Dose Rate Upset >10 10 1012 rad (Si)/s R...
Description	From old datasheet system radiation Hardened Quad 2-Input Exclusive OR Gate
File Size	146.02K / 9 Page	View it Online	Download Datasheet

				Intersil, Corp. Hirose Electric INTERSIL[Intersil Corporation]
Part No.	HCTS93D HCTS93DMSR HCTS93HMSR HCTS93K HCTS93KMSR HCTS93MS FN3060 HD-0660M3-GH HD-0660M3-GH-1
OCR Text	...ened SOS CMOS * Total Dose 200K rad (Si) * SEP Effective LET No Upsets: >100 MEV-cm2/mg * Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) * Dose Rate Survivability: >1 x 1012 rad (Si)/s * Dose Rate Upset >1010 rad (Si)/s ...
Description	radiation Hardened 4-Bit Binary Ripple Counter HCT SERIES, ASYN NEGATIVE EDGE TRIGGERED 3-BIT UP BINARY COUNTER, CDFP14 3 dB 90 Card Couplers From old datasheet system
File Size	167.80K / 9 Page	View it Online	Download Datasheet

				ZARLINK[Zarlink Semiconductor Inc]
Part No.	KESTX01IG KESTX01MPAD KESTX01MPAS KESTX0
OCR Text	...z (1) -11 dBc 9.5 A/rad dB VCC = 3.5V G VCO Txe 110 5.0 MHz/V ms SB -40 dBc I mod =150A, F o =434MHz (1, 4) T30R 380 ns T30F 430 ns 400 434 460 MHz VCC = 3.5 Notes: 1. ...
Description	400MHz - 460MHz ASK Transmitter
File Size	169.04K / 10 Page	View it Online	Download Datasheet

				Aeroflex Circuit Technology
Part No.	5962F0151601QXA 5962F0151601QXC 5962F0151601QXX 5962F0151601QYA 5962F0151601QYX 5962F0151601QYC 5962F0151601VXA 5962F0151601VXX 5962F0151601VXC 5962F0151601VYA 5962F0151601VYC 5962G0151601QXA 5962F0151601VYX 5962G0151601QXC 5962G0151601QXX 5962G0151601QYA 5962G0151601QYC 5962G0151601QYX 5962G0151601VXA 5962G0151601VXC 5962G0151601VXX 5962G0151601VYA 5962G0151601VYC 5962G0151601VYX 5962H0151601QXA 5962H0151601QXC 5962H0151601QXX 5962H0151601QYA 5962H0151601QYC 5962H0151601QYX 5962R0151601QXA 5962R0151601QXC 5962R0151601QXX 5962R0151601QYA 5962R0151601QYC 5962R0151601QYX 5962R0151601VXA 5962H0151601VXA 5962H0151601VXX 5962H0151601VYA 5962H0151601VYC 5962H0151601VXC 5962R0151601VXC 5962R0151601VXX
OCR Text	... standby: 500 m a maximum (post-rad) q radiation-hardened process and design; total dose irradiation testing to mil-std-883, method 1019 - total dose: 1e6 rad(si) - let th (0.25) ~ 100 mev-cm 2 /mg - sel immune > 128 mev-...
Description	radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 3E5 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 3E5 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 3E5 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 3E5 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 3E5 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 3E5 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 5E5 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 5E5 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 5E5 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 5E5 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 5E5 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 5E5 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 1E6 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 1E6 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 1E6 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 1E5 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 1E5 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 1E5 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 1E5 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 1E6 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 1E6 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 1E6 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 1E5 rads(Si). radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 1E5 rads(Si).
File Size	78.31K / 11 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FSYC055R3 FSYC055R4 FN4526
OCR Text	... 0.012 * Total Dose - Meets Pre-rad Specifications to 100K rad (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias * D...
Description	radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs radiation Hardened, SEGR Resistant N-Channel Power MOSFETs From old datasheet system
File Size	48.80K / 8 Page	View it Online	Download Datasheet

For rad Found Datasheets File :: 3549 Search Time::0.985ms
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