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  rdram Datasheet PDF File

For rdram Found Datasheets File :: 193    Search Time::1.313ms    
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Part No. KMMR18R84C1-RG6 KMMR16R84C1-RG6 KMMR16R8GC1-RG6
OCR Text ... and board design technologies. rdram devices are capable of sustained data transfers at 1.25 ns per two bytes (10ns per 16 bytes). the rdram architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly address...
Description 8M X 18 RAMBUS MODULE, DMA84
8M X 16 RAMBUS MODULE, DMA84

File Size 164.55K  /  10 Page

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    HYB25M128160C-840 HYB25R144180C-840 HYB25R128160C-840 HYB25M144180C-840 HYB25M128160C-653

Infineon Technologies AG
Part No. HYB25M128160C-840 HYB25R144180C-840 HYB25R128160C-840 HYB25M144180C-840 HYB25M128160C-653
OCR Text rdram 128/144-mbit (256k 16/18 32s) overview the rambus direct rdram ? is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other applic...
Description 8M X 16 DIRECT RAMBUS DRAM, 40 ns, PBGA62 FBGA-62
8M X 18 DIRECT RAMBUS DRAM, 40 ns, PBGA62 FBGA-62
8M X 16 DIRECT RAMBUS DRAM, 53 ns, PBGA62

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    Intersil
Part No. HIP6503
OCR Text ... sb pci/auxiliary/lan -2.5v mem rdram or 3.3v mem sdram -2.5v clk clock/processor terminations -1.8v sb ich2 resume well  excellent output voltage regulation -alloutputs: 2.0% over temperature (as applicable)  small size; very low extern...
Description Multiple (5) Linear Controller, ACPI Control Interface

File Size 593.80K  /  14 Page

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    INTEL CORP
Part No. RPIXP2800BA RPIXP2800AB
OCR Text ...keys ? three industry standard rdram interfaces ? peak bandwidth of 2.1 gbytes/s ? 800-mhz and 1066-mhz rdram ? error correction code (ecc) ? addressable from intel xscale ? core, microengines, and pci ? four industry standard 32-bit q...
Description 32-BIT, 1000 MHz, RISC PROCESSOR, PBGA1356
32-BIT, 1400 MHz, RISC PROCESSOR, PBGA1356

File Size 825.71K  /  130 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
Part No. MR18R16228DF0 MR16R1622 MR18R1622DF0 MR16R16224DF0 MR18R16224DF0 MR18R1622GDF0 MR16R1622DF0 MR16R16228DF0 MR16R162GDF0 MR18R162GDF0
OCR Text ... and board design technologies. rdram devices are capable of sustained data transfers at 0.94 ns per two bytes (7.5ns per 16 bytes). The rdram architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly address...
Description (MR1xR1622(4/8/G)DF0) Key Timing Parameters

File Size 440.00K  /  16 Page

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    MR18R1628EG0-CM8 MR16R1628EG0-CK8 MR16R162GEG0-CK8 MR16R16248EG0 MR16R1624EG0-CK8 MR16R1624EG0-CM8 MR16R1624EG0-CT9 MR16

Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. MR18R1628EG0-CM8 MR16R1628EG0-CK8 MR16R162GEG0-CK8 MR16R16248EG0 MR16R1624EG0-CK8 MR16R1624EG0-CM8 MR16R1624EG0-CT9 MR16R1624GEG0 MR16R162GEG0-CM8 MR16R162GEG0-CT9 MR18R1624EG0-CK8 MR18R1624EG0-CM8 MR18R1624EG0-CT9 MR18R1624GEG0 MR18R1628EG0-CK8 MR18R1628EG0-CT9 MR18R162GEG0-CK8 MR18R162GEG0-CM8 MR18R162GEG0-CT9 MR18R16248EG0 MR16R1628EG0-CM8 MR16R1628EG0-CT9
OCR Text ... and board design technologies. rdram devices are capable of sustained data transfers at 0.94 ns per two bytes (7.5ns per 16 bytes). The rdram architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly address...
Description From old datasheet system
CONN HEADER 20POS DL PCB 30GOLD
Key Timing Parameters 关键的定时参
CONN HEADER 18POS DL PCB 30GOLD 关键的定时参

File Size 439.82K  /  16 Page

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    MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF0 MR16R1624AF0 MR16R1628AF0 MR16R1622AF0 MR16R1624AF0-CK8 MR16R1624AF0

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF0 MR16R1624AF0 MR16R1628AF0 MR16R1622AF0 MR16R1624AF0-CK8 MR16R1624AF0-CM8 MR18R1628AF0-CK8 MR18R1628AF0-CM8 MR18R1628AF1-CN9 MR18R1628AF1-CT9 MR18R1622AF0-CK8 MR18R1622AF0-CM8 MR18R162GAF0-CK8 MR18R162GAF0-CM8 MR18R162GAF0-CN9 MR18R162GAF0-CT9 MR18R1624AF0-CK8 MR18R1624AF0-CM8 MR18R1624AF1-CN9 MR18R1624AF1-CT9 MR16R1622AF0-CK8 MR16R1622AF0-CM8 MR16R162GAF0-CK8 MR16R162GAF0-CM8 MR16R1628AF0-CK8 MR16R1628AF0-CM8
OCR Text ... and board design technologies. rdram devices are capable of sustained data transfers at 0.94 ns per two bytes (7.5ns per 16 bytes). The rdram architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly address...
Description 64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V
16Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V

File Size 417.13K  /  16 Page

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    MR16R082GBN1 MR16R082CGBN1-CK8 MR16R0824BN1 MR16R0824BN1-CG6 MR16R0824BN1-CK7 MR16R0824BN1-CK8 MR16R0826BN1 MR16R0826BN1

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. MR16R082GBN1 MR16R082CGBN1-CK8 MR16R0824BN1 MR16R0824BN1-CG6 MR16R0824BN1-CK7 MR16R0824BN1-CK8 MR16R0826BN1 MR16R0826BN1-CG6 MR16R0826BN1-CK7 MR16R0826BN1-CK8 MR16R0828BN1 MR16R0828BN1-CG6 MR16R0828BN1-CK7 MR16R0828BN1-CK8 MR16R082CGBN1-CG6 MR16R082CGBN1-CK7 MR16R082CBN1
OCR Text rdram(B-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. 00) Based on the Samsung 128M rdram (A-die) SPD Specification 1.02 version. -1- Version 1.1 Oct. 2000 SERIAL PRESENCE DETECT MR16R0824(6/8)B...
Description (MR16R0824(6/8/C/G)BN1) RAMBUS MODULE
RAMBUS MODULE Rambus的模

File Size 37.07K  /  4 Page

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For rdram Found Datasheets File :: 193    Search Time::1.313ms    
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