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				Taiwan Semiconductor
Part No.	KBU803G
OCR Text	... units maximum recurrent peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum avera g e forward r...
Description	Bridge: Standard
File Size	82.24K / 2 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BTS120 C67078-A5009-A2
OCR Text	... VGS = 0, VDS = 25 V, f = 1 MHz reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Values typ. max. Unit V(BR)DSS 100 - 3.0 - 3.5 V VGS(th) 2.5 I DSS - - 1 100 10 300 A I GSS - - 10 2 0.09 100 4 0.1 nA A - ...
Description	From old datasheet system TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) N-Channel TEMPFET
File Size	310.34K / 9 Page	View it Online	Download Datasheet

				Omnirel
Part No.	JANTX1N6772 JANTX1N6772R JANTX1N6773R JAN1N6773R JANTXV1N6773R 1N6768R 1N6769R 1N6771 1N6770R 1N6771R
OCR Text	...00 550 600 100 c 25 c typical reverse current 1n6772, 1n6773 100 10 50 20 1.0 5.0 2.0 0.1 0.5 0.2 0.01 0.05 0.02 0 20 40 60 80 100 120 140 160 180 200 t c = 150 c 100 c 25 c 100 50 30 20 10 5.0 3.0 2.0 1.0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2...
Description	16Amp, 50-600V rectifier
File Size	20.81K / 2 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text	...E = 25 V, VGE = 0 V, f = 1 MHz reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Jul-31-1996 BSM 50 GB 170 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specif...
Description	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块（半桥包括快速续流二极管的绝缘金属基片包 From old datasheet system
File Size	111.79K / 9 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT60DS04HJ
OCR Text	... ratings unit v r maximum dc reverse voltage v rrm maximum peak repetitive reverse voltage 45 v i fav rectangular, d = 0.5 t c = 80c 60 i fsm non-repetitive forward surge current t = 10ms t j = 45c 600 a ...
Description	ISOTOP Schottky Diode Full Bridge Power Module
File Size	59.18K / 3 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9579GS-HF
OCR Text	...nce v ds =-25v - 375 - pf c rss reverse transfer capacitance f=1.0mhz - 270 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-20a, v gs =0v - - -1.3 v t rr reverse recovery time 2 ...
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	91.55K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9579GP-HF AP9579GP-HF14
OCR Text	...nce v ds =-25v - 375 - pf c rss reverse transfer capacitance f=1.0mhz - 270 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-20a, v gs =0v - - -1.3 v t rr reverse recovery time 2 ...
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
File Size	92.00K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9579GM-HF AP9579GM-HF14
OCR Text	...nce v ds =-15v - 450 - pf c rss reverse transfer capacitance f=1mhz - 300 - pf r g gate resistance f=1.0mhz - 2.5 5 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.9a, v gs =0v - -...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
File Size	56.22K / 4 Page	View it Online	Download Datasheet

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