S29GL128M90FDIR22 pdf Datasheet P1 Part Num --- IC-ON-LINE


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S29GL128M90FDIR22 Datasheet PDF File

For S29GL128M90FDIR22 Found Datasheets File :: 2+ Page :: | <1> |

					Spansion Inc. Spansion, Inc. SPANSION LLC
Part No.	S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCIR03 S29GL064M90FCIR10 S29GL064M90FCIR12 S29GL064M90FCIR13 S29GL064M90FCIR20 S29GL256M10TAIR13 S29GL064M90TDIR13 S29GL064M90TDIR00 S29GL064M90TDIR02 S29GL064M90TDIR03 S29GL064M90TDIR10 S29GL064M90TDIR12 S29GL064M90FDIR33 S29GL064M90TBIR33 S29GL064M90TBIR32 S29GL064M90TFIR23 S29GL256M10TFIR23 S29GL064M90BCIR13 S29GL064M90BDIR10 S29GL064M90BDIR12 S29GL064M90FBIR20 S29GL064M90BDIR22 S29GL064M90FBIR22 S29GL064M90FDIR03 S29GL064M90BDIR33 S29GL064M90BDIR02 S29GL064M90BDIR32 S29GL064M90BDIR23 S29GL064M90TBIR22 S29GL064M90TBIR23 S29GL064M90TCIR20 S29GL064M90TBIR10 S29GL064M90BFIR10 S29GL064M90BFIR20 S29GL128M90TDIR82 S29GL064M90FAIR12 S29GL064M90FAIR10 S29GL128M90TFIR82 S29GL256M10TAIR20 S29GL128M90TAIR13 S29GL128M90TDIR12 S29GL128M90TAIR10 S29GL128M90FDIR22 S29GL064M90BCIR23 S29GL064M90FBIR03 S29GL256M10TFIR20 S29GL064M90BFIR00 S29GL064M90BDIR13 S29GL064M90TDIR22 SPANSIONINC.-S29GL064M90BFIR10 SPANSIONLLC-S29GL064M90TBIR20 S29GL064M90FFIR23 SPANSIONLLC-S29GL064M90FFIR32
Description	MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2) MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L) MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
File Size	2,173.74K / 160 Page	View it Online	Download Datasheet

HUA FENG CIRCUIT

					SPANSION
Part No.	S29GL064M90TFIR00 S29GL064M90TFIR02 S29GL064M90TFIR03 S29GL064M90TFIR10 S29GL064M90TFIR12 S29GL064M90TFIR13 S29GL064M90TFIR20 S29GL064M90TFIR22 S29GL064M90TFIR23 S29GL064M90TFIR30 S29GL064M90TFIR32 S29GL064M90TFIR33 S29GL128M90TAIR10 S29GL128M90TAIR12 S29GL128M90TAIR13 S29GL064M S29GL128M S29GL128M90FAIR10 S29GL128M90FAIR12 S29GL128M90FAIR13 S29GL128M90FAIR20 S29GL128M90FAIR22 S29GL128M90FAIR23 S29GL128M90FAIR80 S29GL128M90FAIR82 S29GL128M90FAIR83 S29GL128M90FDIR10 S29GL128M90FDIR12 S29GL128M90FDIR13 S29GL128M90FDIR20 S29GL128M90FDIR22 S29GL128M90FDIR23 S29GL128M90FDIR80 S29GL128M90FDIR82 S29GL128M90FDIR83 S29GL128M90FFIR10 S29GL128M90FFIR12 S29GL128M90FFIR13 S29GL128M90FFIR20 S29GL128M90FFIR22 S29GL128M90FFIR23 S29GL128M90FFIR80 S29GL128M90FFIR82 S29GL128M90FFIR83 S29GLXXXM S29GL256M10FAIR10 S29GL256M10FAIR12 S29GL256M10FAIR13 S29GL256M10FAIR20 S29GL256M10FAIR22 S29GL256M10FFIR12 S29GL256M10FFIR13 S29GL256M10FFIR20 S29GL256M10FFIR22 S29GL256M10FFIR23 S29GL256M10TAIR10 S29GL256M10TAIR12 S29GL256M10TAIR13 S29GL256M10TAIR22 S29GL256M10TAIR23 S29GL032M10FAIR00 S29GL064M90FAIR00 S29GL064M90FAIR02 S29GL032M10FAIR03 S29GL064M90FAIR03 S29GL032M10BCIR00 S29GL064M90BCIR00 S29GL032M10BCIR02
Description	3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
File Size	2,140.16K / 160 Page	View it Online	Download Datasheet

For S29GL128M90FDIR22 Found Datasheets File :: 2+ Page :: | <1> |

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