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Nexperia
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Part No. |
BZT52-B16 BZT52-B36 BZT52-B39
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OCR Text |
single zener diodes in a sod123 package rev. 1 20 december 2017 product data sheet 1 1 product profile 1.1 general description general-purpose zener diodes in a sod123 small surface-mounted device (smd) plastic package. 1.2 features an... |
Description |
Single Zener diodes in a SOD123 package
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File Size |
188.03K /
11 Page |
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Alpha & Omega Semiconductor
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Part No. |
AOTF20N40
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OCR Text |
...o-case avalanche current c 540 single pulsed avalanche energy g 1080 parameter maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds junction and storage temperature range maximum junction-to-ambient a,d 6 repetiti... |
Description |
Single MV MOSFETs (40V - 400V)
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File Size |
340.58K /
6 Page |
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Alpha & Omega Semiconductor
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Part No. |
AONS32314
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OCR Text |
...onal heatsinking is used. c. single pulse width limited by junction temperature t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction to ca se r q jc and case to ambient. e. the static characteristics in ... |
Description |
Single LV MOSFETs (12V - 30V)
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File Size |
231.85K /
6 Page |
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it Online |
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Skyworks Solutions
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Part No. |
ADA1200GS24Q1
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OCR Text |
... ? noise figure: 2.3 db ? single +5 v supply ? small sot-89 package ? materials set consistent with rohs directives ? characterized for mer performance s kywork s green tm product s are compliant with all applicable l... |
Description |
50 to 1000 MHz CATV Low-noise 12 dB gain Linear Amplifier
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File Size |
434.71K /
10 Page |
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it Online |
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Alpha & Omega Semiconductor
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Part No. |
AOTF42S60
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OCR Text |
...=25c dv/dt power dissipation b single pulsed avalanche energy g p d repetitive avalanche energy c va 166 t c =100c pulsed drain current c continuous drain current t c =25c i d 30 gate-source voltage the aotf42s60 have been fabricated u... |
Description |
Single HV MOSFETs (500V - 1000V)
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File Size |
282.90K /
6 Page |
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it Online |
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Alpha & Omega Semiconductor
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Part No. |
AOTF12T50P
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OCR Text |
...e, 1/8" from case for 5 seconds single pulsed avalanche energy g power dissipation b mj dv/dt derate above 25 o c p d avalanche current c t c =25c t c =100c continuous drain current repetitive avalanche energy c v 1000 500 50 v/ns param... |
Description |
Single HV MOSFETs (500V - 1000V)
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File Size |
411.08K /
6 Page |
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it Online |
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ST Microelectronics
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Part No. |
STU2N80K5
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OCR Text |
...ax current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 0.5 a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 60.5 mj dv/dt (3) 3. i sd 2 a, di/dt 100 a/ s, ... |
Description |
N-channel 800 V, 3.5 Ohm typ., 2 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
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File Size |
1,597.49K /
23 Page |
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Alpha & Omega Semiconductor
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Part No. |
AOTF4N60
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OCR Text |
... mj 104 35 avalanche current c single plused avalanche energy g repetitive avalanche energy c v gate-source voltage pulsed drain current c continuous drain current t c =25c i d 4 4* 2.7 16 2.5 94 t c =25c thermal characteristics the ao... |
Description |
Single HV MOSFETs (500V - 1000V)
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File Size |
359.99K /
6 Page |
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it Online |
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Nexperia
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Part No. |
PMCM4401VNE
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OCR Text |
...r4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting p ad for drain 6 cm 2 . downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia pmcm4401vne 12v, n-channel trench mosfet pmcm4401vne all in... |
Description |
12V, N-channel Trench MOSFET
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File Size |
320.46K /
15 Page |
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it Online |
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Alpha & Omega Semiconductor
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Part No. |
AOL1240
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OCR Text |
...75 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 ... |
Description |
Single MV MOSFETs (40V - 400V)
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File Size |
276.89K /
6 Page |
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it Online |
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Price and Availability
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