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NXP Semiconductors N.V.
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| Part No. |
PDTA113E PDTA113EE PDTA113EK PDTA113EM PDTA113ES PDTA113ET PDTA113EU PDTA113ET215 PDTA113EU115
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| OCR Text |
...ong * = t: made in Malaysia * = w: made in China
PDTA113E_SER_5
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 -- 2 September 2009
3 of 18
NXP Semiconductors
PDTA113E series
PNP resistor-equipped t... |
| Description |
PNP resistor-equipped transistors; R1 = 1 kw, R2 = 1 kw
PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm; Package: SOT323 (SC-70); Container: Tape reel smd
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| File Size |
107.65K /
18 Page |
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NXP Semiconductors N.V.
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| Part No. |
PDTA144VU
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| OCR Text |
...equipped transistors; r1 = 47 k w , r2 = 10 k w rev. 04 3 september 2009 product data sheet table 1. product overview type number package n...ser_4 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 04 3 september 2009 2 of 18 nxp... |
| Description |
PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm PNP配电阻型晶体管；R1=47千欧姆，R2=10千欧
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| File Size |
108.73K /
18 Page |
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NXP Semiconductors N.V.
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| Part No. |
PDTC123TT215
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| OCR Text |
...quipped transistors; r1 = 2.2 k w , r2 = open rev. 01 10 march 2006 product data sheet table 1. product overview type number package pnp co...ser_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. product data sheet rev. 01 ... |
| Description |
NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open; Package: SOT23 (TO-236AB); Container: Tape reel smd 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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| File Size |
70.27K /
10 Page |
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NXP Semiconductors N.V.
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| Part No. |
BTA312-600B
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| OCR Text |
... - 2 a p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 c t j junction ...ser_b_c v.1 modifications: ? type number bta312-600b separated from data sheet bta312_ser_b_c v.1. ?... |
| Description |
3Q Hi-Com Triac BTA312-600B<SOT78 (SOT78)|<<http://www.nxp.com/packages/SOT78.html<1<,;BTA312-600B/DG<SOT78 (SOT78)|<<http://www.nxp.com/packages/SOT78.html<1<,;
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| File Size |
124.00K /
14 Page |
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NXP Semiconductors N.V.
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| Part No. |
BTA204X-600D BTA204X-600E
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| OCR Text |
... - 2 a p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature ? 40 +150 ?c t j junction temperature - 125 ?c
bta204x_ser_d_e_f all information provided in this document is subject to ... |
| Description |
3Q Hi-Com Triac BTA204X-600D<SOT186A (SOT186A)|<<http://www.nxp.com/packages/SOT186A.html<1<week 32, 2004,;
3Q Hi-Com Triac BTA204X-600E<SOT186A (SOT186A)|<<http://www.nxp.com/packages/SOT186A.html<1<week 32, 2004,;
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| File Size |
119.01K /
13 Page |
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it Online |
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