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				International Rectifier
Part No.	IRFE420-15
OCR Text	...= 25c max. power dissipation 14 w linear derating factor 0.11 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 0.2...test conditions i s continuous source current (body diode) ? ? 1.4 i sm pulse source current (body ...
Description	Simple Drive Requirements
File Size	228.30K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDPF085N10A
OCR Text	...issipation (t c = 25 o c) 33.3 w - derate above 25 o c0.22w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l ma...test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 a, v gs = ...
Description	N-Channel PowerTrenchMOSFET 100V, 40A, 8.5m
File Size	302.65K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDH055N15A
OCR Text	...dissipation (t c = 25 o c) 429 w - derate above 25 o c2.86w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l ma...test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 a, v gs = ...
Description	N-Channel PowerTrenchMOSFET 150V, 167A, 5.9m
File Size	296.24K / 9 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	EMIF06-1005N12
OCR Text	...opening dimensions: l (length), w (width), t (thickness). figure 16. stencil opening dimensions b) general design rule stencil thickness (t) = 75 ~ 125 m 2. reference design a) stencil opening thickness: 100 m b) stencil opening for cent...
Description	6-line low capacitance EMI filter and ESD protection
File Size	371.24K / 12 Page	View it Online	Download Datasheet

				Advanced Power Electron...
Part No.	AP50T10GS-HF-16
OCR Text	... c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.4 /w ...test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 ...
Description	Fast Switching Characteristic
File Size	58.54K / 5 Page	View it Online	Download Datasheet

				Advanced Power Electron...
Part No.	AP50T10GM-HF-16
OCR Text	...t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance junction-ambient 3 50 /w data and specif...test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 ...
Description	Simple Drive Requirement
File Size	50.33K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SD467
OCR Text	... 150 -55 to +150 Unit V V V A A w C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min...test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 1 ...
Description	Silicon NPN Epitaxial
File Size	29.20K / 6 Page	View it Online	Download Datasheet

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