W4NXD8C-0000 pdf Datasheet P1 Part Num --- IC-ON-LINE

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CS-USBAB00000-000.5

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Amphenol CS-USBAB00000-000.5 Molded USB 2.0 Cable - Type A-B 0.5m

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W4NXD8C-0000 Datasheet PDF File

For W4NXD8C-0000 Found Datasheets File :: 150+ Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				VECTRON INTERNATIONAL
Part No.	QF140.0-10000/06
Description	1 FUNCTIONS, 140 MHz, 50 kHz BW(delta f), CRYSTAL FILTER
File Size	40.23K / 2 Page	View it Online	Download Datasheet

				CREE POWER
Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

				Vectron
Part No.	QF10.7-10000/04
Description	Monolithic Crystal Filter, Selected customer types
File Size	53.61K / 1 Page	View it Online	Download Datasheet

				POSITRONIC INDUSTRIES INC
Part No.	RD29M00000/AA
Description	29 CONTACT(S), MALE, D SUBMINIATURE CONNECTOR, CRIMP
File Size	146.26K / 1 Page	View it Online	Download Datasheet

				Solid States Devices, Inc. Harwin PLC
Part No.	SFT10000/3
Description	20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR 20 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-3
File Size	55.24K / 2 Page	View it Online	Download Datasheet

				Linear Technology, Corp. ON Semiconductor
Part No.	NCZTA/2.0000/A NCZTA/4.0000/A NCZTA/3.5800/A NCZTA/12.000/B NCZTA/8.0000/B
Description	IC 集成电路
File Size	31.23K / 1 Page	View it Online	Download Datasheet

				Deltron Components
Part No.	900-0000
Description	3000LB LEVER PRESS
File Size	71.94K / 1 Page	View it Online	Download Datasheet

				Yokogawa Electric, Corp.
Part No.	335-0000-01
Description	STECKER CINCH MASSIVKONTAKT SW STECKER紧握MASSIVKONTAKT西南
File Size	72.58K / 1 Page	View it Online	Download Datasheet

				ITT CANNON
Part No.	50-053-0000
Description	BOARD TERMINATED, FEMALE, SMC CONNECTOR, SOLDER, RECEPTACLE
File Size	876.60K / 3 Page	View it Online	Download Datasheet


Part No.	336-0000-01
Description	STECKER CINCH GOLDAUFLAGE 0.5U
File Size	46.79K / 1 Page	View it Online	Download Datasheet

For W4NXD8C-0000 Found Datasheets File :: 150+ Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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