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Renesas Electronics, Corp. Renesas Electronics Corporation
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Part No. |
M6MGD13TW66CWG-P
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Description |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位(8388608字由16位)的CMOS闪存 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
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File Size |
119.78K /
3 Page |
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it Online |
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Part No. |
BCW67RB BCW67RC BCW67RA BCV71R BCW61RC BCW60R BCW60RA BCW60RC BCW65RB BCW65RA BCW66RG
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Description |
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 800MA I(C) | TO-236 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-236 DIODE TVS 15V 1.5KW UNI-DIR TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-236 Resettable Fuse; Operating Voltage Max:6V; Resistance:0.05ohm; Holding Current:2.6uA; Tripping Current:5.2uA; Initial Resistance Min:0.01ohm; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Package/Case:1812 Resettable Fuse; Operating Voltage Max:6V; Resistance:0.07ohm; Holding Current:2uA; Tripping Current:4uA; Initial Resistance Min:0.018ohm; Leaded Process Compatible:No; Mounting Type:Surface Mount; Package/Case:1812 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 800MA I(C) | TO-236 晶体管|晶体管|叩| 45V的五(巴西)总裁| 800mA的一(c)|36
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File Size |
87.76K /
1 Page |
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it Online |
Download Datasheet
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Bom2Buy.com

Price and Availability
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JITONG
TECHNOLOGY
(CHINA HK & SZ)
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Part: W6630CR |
Maker: WINBOND |
Pack: SSOP |
Stock: 375 |
Unit price
for : |
50: $2.77 |
100: $2.63 |
1000:
$2.49 |
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