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Renesas Electronics, Corp.
Renesas Electronics Corporation
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| Part No. |
M6MGD13TW66CWG-P
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| Description |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位（8388608字由16位）的CMOS闪存
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
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| File Size |
119.78K /
3 Page |
 View
it Online |
Download Datasheet
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| Part No. |
BCW67RB BCW67RC BCW67RA BCV71R BCW61RC BCW60R BCW60RA BCW60RC BCW65RB BCW65RA BCW66RG
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| Description |
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 800MA I(C) | TO-236
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-236
DIODE TVS 15V 1.5KW UNI-DIR
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-236
Resettable Fuse; Operating Voltage Max:6V; Resistance:0.05ohm; Holding Current:2.6uA; Tripping Current:5.2uA; Initial Resistance Min:0.01ohm; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Package/Case:1812
Resettable Fuse; Operating Voltage Max:6V; Resistance:0.07ohm; Holding Current:2uA; Tripping Current:4uA; Initial Resistance Min:0.018ohm; Leaded Process Compatible:No; Mounting Type:Surface Mount; Package/Case:1812
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 800MA I(C) | TO-236 晶体管|晶体管|叩| 45V的五（巴西）总裁| 800mA的一（c）|36
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| File Size |
87.76K /
1 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor |
| Part: W6630CR |
| Maker: WINBOND |
| Pack: SSOP |
| Stock: 375 |
| Unit price
for : |
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50: $2.77 |
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100: $2.63 |
| 1000:
$2.49 |
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