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					NEC[NEC]
Part No.	UPD16780 UPD16780N UPD16780N-XXX
OCR Text	... Users are requested to consult wiht a NEC sales representative. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types a...
Description	LCD Display Driver 288/300 OUTPUT TFT-LCD SOURCE DRIVER
File Size	84.19K / 16 Page	View it Online	Download Datasheet

					Hittite Microwave Corpo... Hittite Microwave Corporation
Part No.	HMC284MS8G
OCR Text	...al power capability is acheived wiht Vdd = +7V and A/B set to 0/+7V. 5. Back side paddle must be connected to RF ground. 6. A grounded coplanar waveguide PCB layout technique is recommended to achieve high isolation. The component side grou...
Description	SPDT NON-REFLECTIVE SWITCH, DC - 3.5 GHz
File Size	204.84K / 6 Page	View it Online	Download Datasheet

					Hittite Microwave Corpo... HITTITE[Hittite Microwave Corporation]
Part No.	HMC204
OCR Text	...d wire. Thermosonic wirebonding wiht a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energry to achieve reliable wi...
Description	GaAs MMIC PASSIVE FREQUENCY DOUBLER, 4 - 8 GHz INPUT
File Size	154.40K / 6 Page	View it Online	Download Datasheet

					Korea Electronics (KEC)
Part No.	KTD998
OCR Text	...CURVES MUST BE DERATED LINEARLY wiht INCREASE IN TEMPERATURE. 0.01 0.01 0.3 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) 0.1 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) Pc - Ta COLLECTOR POWER DISS...
Description	General Purpose Transistor TRIPLE DIFFUSED NPN TRANSISTOR
File Size	76.42K / 2 Page	View it Online	Download Datasheet

					Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
Part No.	KTA1204 KTA1204D
OCR Text	...CURVES MUST BE DERATED LINEARLY wiht INCREASE IN TEMPERATURE. Ta=25 C 0 20 40 60 80 100 120 140 160 -0.01 -0.1 AMBIENT TEMPERATURE Ta ( C) -10 -30 -100 -0.3 -1 -3 COLLECTOR-EMITTER VOLTAGE VCE...
Description	EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING)
File Size	405.60K / 4 Page	View it Online	Download Datasheet

					Hittite Microwave Corporation
Part No.	HMC158
OCR Text	...d wire. Thermosonic wirebonding wiht a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energry to achieve reliable wi...
Description	GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER/ 1.3 - 4.0 GHz INPUT GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 1.3 - 4.0 GHz INPUT
File Size	163.50K / 4 Page	View it Online	Download Datasheet

					HITTITE[Hittite Microwave Corporation]
Part No.	HMC205
OCR Text	...d wire. Thermosonic wirebonding wiht a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energry to achieve reliable wi...
Description	GaAs MMIC PASSIVE FREQUENCY DOUBLER, 6 - 12 GHz INPUT GaAs MMIC PASSIVE FREQUENCY DOUBLER 6 - 12 GHz INPUT
File Size	180.63K / 6 Page	View it Online	Download Datasheet

					GOOD-ARK Electronics
Part No.	LL4148
OCR Text	...everse breakdown voltage tested wiht 100uA pulses Capacitance at VF=VR=0 at Tj=25 Symbols Min. Typ. Max. Units VF IR IR IR V(BR)R Ctot Vfr trr RthA V 100 0.45 - 1 25 5 50 4 2.5 4 0.35 1) Volt nA uA uA Volts F Volts nS K/...
Description	SILICON EPITAXIAL PLANAR DIODE
File Size	218.33K / 4 Page	View it Online	Download Datasheet

					GOOD-ARK Electronics
Part No.	1N4148
OCR Text	...everse breakdown voltage tested wiht 100uA pulses Capacitance at VF=VR=0 Voltage rise when switching ON tested with 50mA forward pulses tp=0.1uS, rise time<30nS, fp=5 to 100KHz Reverse recovery time from IF=10mA to IR=1mA, VR=6V, RL=100 The...
Description	SILICON EPITAXIAL PLANAR DIODE
File Size	248.88K / 4 Page	View it Online	Download Datasheet

					KEC Holdings KEC(Korea Electronics) Korea Electronics (KEC)
Part No.	KTC1804L KTC1804D KTC1804
OCR Text	...CURVES MUST BE DERATED LINEARLY wiht INCREASE IN TEMPERATURE. Ta=25 C 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 10 30 100 0.1 0.3 1 3 COLLECTOR-EMITTER VOLTAGE VCE (V) 2003....
Description	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING) 外延平面NPN晶体管（大电流开关）
File Size	405.61K / 4 Page	View it Online	Download Datasheet

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