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Xilinx
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| Part No. |
XC5VLX20T XC5VLX220 XC5VLX30 XC5VLX30T XC5VLX220T
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| OCR Text |
...- simple dual-port widths up to x72 ? built-in optional error-correction circuitry ? optionally program each block as two independent 18-kbit blocks ? high-performance parallel selectio technology ? 1.2 to 3.3v i/o operation ? source-synch... |
| Description |
Fpga Integrated Circuit
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| File Size |
221.27K /
13 Page |
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| Part No. |
CXK79M36C161GB CXK79M72C161GB
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| OCR Text |
...pe quantity description a input x72 = 16 x36 = 17 x18 = 18 address inputs - registered on the rising edge of ck. a1, a0 input 2 address inputs 1,0 - registered on the rising edge of ck. initialize burst counter. dqa, dqb dqc, dqd dqe, dqf d... |
| Description |
MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01) MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
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| File Size |
222.73K /
30 Page |
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| Part No. |
CXK79M72C160GB CXK79M36C160GB
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| OCR Text |
...pe quantity description a input x72 = 16 x36 = 17 x18 = 18 address inputs - registered on the rising edge of ck. a1, a0 input 2 address inputs 1,0 - registered on the rising edge of ck. initialize burst counter. dqa, dqb dqc, dqd dqe, dqf d... |
| Description |
MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (256K x 72) (27 pages 364K Rev. 7/6/01) MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (512K x 36) (27 pages 364K Rev. 7/6/01)
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| File Size |
226.66K /
30 Page |
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| Part No. |
CXK79M72C164GB CXK79M36C164GB
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| OCR Text |
...pe quantity description a input x72 = 16 x36 = 17 x18 = 18 address inputs - registered on the rising edge of ck. a1, a0 input 2 address inputs 1,0 - registered on the rising edge of ck. initialize burst counter. dqa, dqb dqc, dqd dqe, dqf d... |
| Description |
MEMORY-SigmaRAM 16Meg 1x1z HSTL I/O (256K x 72) (27 pages 368K Rev. 7/6/01) MEMORY-SigmaRAM 16Meg 1x1z HSTL I/O (512K x 36) (27 pages 368K Rev. 7/6/01)
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| File Size |
227.90K /
30 Page |
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| Part No. |
CXK79M72C165GB CXK79M36C165GB
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| OCR Text |
...pe quantity description a input x72 = 16 x36 = 17 x18 = 18 address inputs - registered on the rising edge of ck. a1, a0 input 2 address inputs 1,0 - registered on the rising edge of ck. initialize burst counter. dqa, dqb dqc, dqd dqe, dqf d... |
| Description |
MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01) MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01)
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| File Size |
223.64K /
30 Page |
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IBM Microeletronics
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| Part No. |
IBM11N1735Q
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| OCR Text |
... uses 4 1mx16 edo drams and the x72 dimm uses 4 1mx16 plus 2 1mx4 edo drams (all in soj packages). the use of edo drams allows for a reduction in page mode cycle time from 40ns (fast page) to 25ns for 60ns and 6rns dram mod- ules. the dimms... |
| Description |
1M x 72 DRAM Module(1M x 72 动态RAM模块)
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| File Size |
377.01K /
31 Page |
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Price and Availability
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