| PART |
Description |
Maker |
| MGFC39V5964A_04 MGFC39V5964A MGFC39V5964A04 |
5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V5964A_04 MGFC36V5964A MGFC36V5964A04 |
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| EIA1616-4P |
16.2-16.4GHz, 4W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应
From old datasheet system
2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFK37V4045 K374045 |
14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET
From old datasheet system
14.0~14.5GHZ BAND 5W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TQP2420B |
2.4GHz ISM Band InGaP HBT Power Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
| TQP2420G |
2.4GHz ISM Band InGaP HBT Power Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
| MGFS45V2123 S452123 |
2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
From old datasheet system
2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
