| PART |
Description |
Maker |
| AOD2C60 |
Trench Power AlphaMOS-II technology
|
TY Semiconductor Co., Ltd
|
| AOB10T60P |
Trench Power AlphaMOS-II technology
|
TY Semiconductor Co., Ltd
|
| IRF7324PBF |
Trench Technology
HEXFET Power MOSFET(-20V, 0.018ohm)
|
International Rectifier
|
| STN4346 |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP4435A |
STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST3422A |
The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST7400 |
ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST2304SRG |
ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST3406SRG |
ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP7401 STP7401S32RG |
STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
