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  trench Datasheet PDF File

For trench Found Datasheets File :: 7557    Search Time::1.781ms    
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    SEMIX402GAL066HDS10

Semikron International
Part No. SEMIX402GAL066HDS10
OCR Text trench igbt modules semix402gal066hds features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? ul recognised file no. e63532 typical applications* ? matrix converter ? resonant inverter...
Description trench IGBT Modules

File Size 143.63K  /  5 Page

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    FDS8842NZ

Fairchild Semiconductor
Part No. FDS8842NZ
OCR Text trench(R) MOSFET February 2009 FDS8842NZ N-Channel Powertrench(R) MOSFET 40 V, 14.9 A, 7.0 m Features Max rDS(on) = 7.0 m at VGS = 10 V, ID = 14.9 A Max rDS(on) = 11.6 m at VGS = 4.5 V, ID = 11.6 A HBM ESD protection level of 4.4 k...
Description N-Channel Powertrench垄莽 MOSFET 40 V, 14.9 A, 7.0 m楼?
N-Channel Powertrench? MOSFET 40 V, 14.9 A, 7.0 mΩ

File Size 290.10K  /  6 Page

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    FDD6776A FDU6776AF071

Fairchild Semiconductor
Part No. FDD6776A FDU6776AF071
OCR Text trench(R) MOSFET January 2009 FDD6776A / FDU6776A_F071 N-Channel Powertrench(R) MOSFET 25 V, 7.5 m Features Max rDS(on) = 7.5 m at VGS = 10 V, ID = 17.7 A Max rDS(on) = 17.0m at VGS = 4.5 V, ID = 13.2 A 100% UIL test RoHS Compliant...
Description N-Channel Powertrench垄莽 MOSFET 25 V, 7.5 m楼?
N-Channel Powertrench? MOSFET 25 V, 7.5 mΩ

File Size 319.61K  /  7 Page

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    FDD6780A FDU6780AF071

Fairchild Semiconductor
Part No. FDD6780A FDU6780AF071
OCR Text trench(R) MOSFET January 2009 FDD6780A / FDU6780A_F071 N-Channel Powertrench(R) MOSFET 25 V, 8.6 m Features Max rDS(on) = 8.6 m at VGS = 10 V, ID = 16.4 A Max rDS(on) = 19.0 m at VGS = 4.5 V, ID = 12.2 A 100% UIL test RoHS Complian...
Description N-Channel Powertrench® MOSFET 25V, 8.6mOhms
N-Channel Powertrench? MOSFET 25 V, 8.6 mΩ
N-Channel Powertrench垄莽 MOSFET 25 V, 8.6 m楼?

File Size 319.42K  /  7 Page

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    FDMC7672

Fairchild Semiconductor
Part No. FDMC7672
OCR Text trench(R) MOSFET July 2009 FDMC7672 N-Channel Power trench(R) MOSFET 30 V, 16.9 A, 5.7 m: Features Max rDS(on) = 5.7 m: at VGS = 10 V, ID = 16.9 A Max rDS(on) = 7.0 m: at VGS = 4.5 V, ID = 15.0 A High performance technology for...
Description N-Channel Power trench垄莽 MOSFET 30 V, 16.9 A, 5.7 m
N-Channel Power trench? MOSFET 30 V, 16.9 A, 5.7 m

File Size 203.95K  /  7 Page

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    FDMC7692

Fairchild Semiconductor
Part No. FDMC7692
OCR Text trench(R) MOSFET July 2009 FDMC7692 N-Channel Power trench(R) MOSFET 30 V, 13.3 A, 8.5 m: Features Max rDS(on) = 8.5 m: at VGS = 10 V, ID = 13.3 A Max rDS(on) = 11.5 m: at VGS = 4.5 V, ID = 10.6 A High performance technology fo...
Description N-Channel Power trench? MOSFET 30 V, 13.3 A, 8.5 m
N-Channel Power trench垄莽 MOSFET 30 V, 13.3 A, 8.5 m

File Size 253.41K  /  7 Page

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    FGA90N33AT

Fairchild Semiconductor
Part No. FGA90N33AT
OCR Text trench IGBT April 2008 FGA90N33AT 330V, 90A PDP trench IGBT Features * High current capability * Low saturation voltage: VCE(sat) =1.1V @ IC = 20A * High input impedance * Fast switching * RoHS compliant tm General Descriptio...
Description 330V, 90A PDP trench IGBT

File Size 607.51K  /  8 Page

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    PMN42XPE

NXP Semiconductors
Part No. PMN42XPE
OCR Text trench mosfet 14 august 2012 product data sheet scan or click this qr code to view the latest information for this product 1. product profile 1.1 general description p-channel enhancement mode field-effect transistor (fet) in a small sot457...
Description 20 V, single P-channel trench MOSFET

File Size 199.28K  /  14 Page

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    PMN42XPEA

NXP Semiconductors
Part No. PMN42XPEA
OCR Text trench mosfet 21 march 2014 product data sheet scan or click this qr code to view the latest information for this product 1. general description p-channel enhancement mode field-effect transistor (fet) in a small sot457 (sc-74) surface-moun...
Description 20 V, P-channel trench MOSFET

File Size 266.54K  /  15 Page

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    FGA90N33ATD

Fairchild Semiconductor
Part No. FGA90N33ATD
OCR Text trench IGBT April 2008 FGA90N33ATD 330V, 90A PDP trench IGBT Features * High current capability * Low saturation voltage: VCE(sat) =1.1V @ IC = 20A * High input impedance * Fast switching * RoHS compliant tm General Descripti...
Description 330V, 90A PDP trench IGBT

File Size 636.89K  /  9 Page

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