| PART |
Description |
Maker |
| MJW16010A |
POWER TRANSISTORS 15 AMPERES 500 VOLTS 125 AND 175 WATTS
|
Motorola, Inc
|
| MJ10016 ON1971 MJ10015 |
NPN SILICON POWER DARLINGTON TRANSISTORS
50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS
From old datasheet system
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| PHW20N50E |
PowerMOS transistors Avalanche energy rated 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| NTE192 NTE193A NTE192A NTE193 |
500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO92HS
Silicon Complementary Transistors Audio Power Output
|
NTE[NTE Electronics]
|
| DME500 |
RF Power Transistors: AVIONICS
500 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz high power COMMON BASE bipolar transistor.
From old datasheet system
|
Advanced Power Technology
GHZTECH[GHz Technology]
RFMD[RF Micro Devices]
RF Micro Devices, Inc.
|
| 2N4232A 2N6313 2N6314 2M4233A 2M6312 2N4231A 2N423 |
POWER TRANSISTORS(5A,75W)
POWER TRANSISTORS(5A/75W)
POWER TRANSISTORS(5A /75W)
POWER TRANSISTORS(5A75W)
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| PDTD123YT215 |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
NXP Semiconductors N.V.
|
| SA20AG |
500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
ON Semiconductor
|
| IRF420-423 IRF421 IRF422 IRF423 IRF822 MTP2N45 IRF |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V N沟道功率MOSFET.0甲，450 V/500 V
Circular Connector; Body Material:Plastic; Series:Trident TNM Series; Connector Shell Size:14; For Use With:Neptune Circular Connectors
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| PDTB123YT PDTB123Y PDTB123YK PDTB123YS |
PNP 500 mA, 50 V resistor-equipped transistors
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PDTD123EK PDTD123E PDTD123ES PDTD123ET |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
