| PART |
Description |
Maker |
| FAS566 |
FAS566 Fast Architecture SCSI Processor
|
N.A.
|
| AIC-43C97 AIC-43C97M_C AIC-43C97M/C |
Automated, High-performance, Integrated, SCSI Protocol Controller designed for SCSI-2/SCSI-3 embedded peripheral applications
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| LX5203 LX5203CDP LX5203CN |
SCSI - Single Ended
9-LINE SCSI ACTIVE TERMINATOR
|
MICROSEMI[Microsemi Corporation]
|
| LX5213CDP LX5213CN LX5213CPWP LX5213 |
SCSI - Single Ended
9-LINE LOW CAPACITANCE/ POWER SCSI TERMINATOR
9-LINE LOW CAPACITANCE, レPOWER SCSI TERMINATOR
9-LINE LOW CAPACITANCE, μPOWER SCSI TERMINATOR
|
Microsemi Corporation
|
| UPD42S17170LLE-A70 UPD42S17170LG5-A70-7KF UPD42S17 |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
| IRF520NLPBF IRF520NSPBF-15 IRF520NSTRLPBF |
FAST SWITCHING
Advanced Process Technology
|
International Rectifier
|
| CY7C1350F CY7C1350F-100AC CY7C1350F-100AI CY7C1350 |
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.8 ns, PBGA119
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 4.5 ns, PQFP100
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.6 ns, PBGA119
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.6 ns, PQFP100
CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, PE-SR047FL (.047" RE-SHAPABLE) 128K X 36 ZBT SRAM, 3.5 ns, PQFP100
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.8 ns, PQFP100
4-Mb (128K x 36) Pipelined SRAM with Nobl(TM) Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
36-Mbit QDR™-II SRAM 2-Word Burst Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM
256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc.
Electronic Theatre Controls, Inc.
|
| CAT64LC40ZJ CAT64LC40ZS CAT64LC40J-TE7 CAT64LC40J- |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
72-Mbit QDR™-II SRAM 4-Word Burst Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL™ Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
72-Mbit QDR-II™ SRAM 2-Word Burst Architecture SPI串行EEPROM
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
|
Analog Devices, Inc.
|
| AGC-V-5 AGC-V-8 AGC-V-1/2 AGC-V-10 |
Cartridge Fuse; Fuse Type:Fast Acting; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Series:AGC-V RoHS Compliant: No FAST BLOW ELECTRIC FUSE, 5A, 250VAC, 200A (IR), THROUGH HOLE
Cartridge Fuse; Fuse Type:Fast Acting; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Series:AGC-V RoHS Compliant: No FAST BLOW ELECTRIC FUSE, 8A, 250VAC, 200A (IR), THROUGH HOLE
FAST BLOW ELECTRIC FUSE, 0.5A, 250VAC, 35A (IR), THROUGH HOLE
|
Cooper Bussmann, Inc.
COOPER INDUSTRIES
|
| CY7C1561KV18 CY7C1561KV18-400BZC CY7C1561KV18-400B |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.29 ns, PBGA165
72-Mbit QDR-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp.
|
